Jacob H. Leach, Ph.D.
Affiliations: | 2010 | Electrical Engineering | Virginia Commonwealth University, Richmond, VA, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Jacob Leach"Parents
Sign in to add mentor| Hadis Morkoç | grad student | 2010 | VCU | |
| (Tuning of electrical properties in indium aluminum nitride/gallium nitride HFETs and barium strontium titanate/YIG phase shifters.) | ||||
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Publications
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| Song Y, Bhattacharyya A, Karim A, et al. (2023) Ultra-Wide Band Gap GaO-on-SiC MOSFETs. Acs Applied Materials & Interfaces |
| Song Y, Shoemaker D, Leach JH, et al. (2021) GaO-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics. Acs Applied Materials & Interfaces. 13: 40817-40829 |
| Song Y, Lundh JS, Wang W, et al. (2020) The Doping Dependence of the Thermal Conductivity of Bulk Gallium Nitride Substrates Journal of Electronic Packaging. 142 |
| Ščajev P, Jarašiūnas K, Leach J. (2020) Carrier recombination processes in Fe-doped GaN studied by optical pump–probe techniques Journal of Applied Physics. 127: 245705 |
| Sunay UR, Zvanut ME, Marbey J, et al. (2019) Small non-uniform basal crystal fields in HVPE free-standing GaN:Mg as evidenced by angular dependent and frequency-dependent EPR. Journal of Physics. Condensed Matter : An Institute of Physics Journal |
| Briggs N, Preciado MI, Lu Y, et al. (2018) Transformation of 2D Group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates. Nanotechnology |
| Reshchikov MA, Usikov A, Helava H, et al. (2017) Evaluation of the concentration of point defects in GaN Scientific Reports. 7: 9297 |
| Paskov PP, Slomski M, Leach JH, et al. (2017) Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment Aip Advances. 7: 095302 |
| Look DC, Leach JH, Metzger R. (2017) Photo-Hall-effect study of excitation and recombination in Fe-doped GaN Journal of Applied Physics. 121: 065702 |
| Slomski M, Paskov PP, Leach JH, et al. (2017) Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping Physica Status Solidi (B). 254: 1600713 |