Congyong Zhu, Ph.D.
Affiliations: | 2013 | Engineering | Virginia Commonwealth University, Richmond, VA, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Congyong Zhu"Parents
Sign in to add mentor| Hadis Morkoç | grad student | 2013 | VCU | |
| (DC, microwave, and noise properties of GaN based heterojunction field effect transistors and their reliability issues.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Ferreyr RA, Li X, Zhang F, et al. (2013) Microwave performance of AlGaN/AlN/GaN -based single and coupled channels HFETs Proceedings of Spie - the International Society For Optical Engineering. 8625 |
| Zhu C, Zhang F, Ferreyra RA, et al. (2013) Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: Role of surface effects Proceedings of Spie - the International Society For Optical Engineering. 8625 |
| Liu H, Avrutin V, Zhu C, et al. (2013) Enhanced microwave dielectric tunability of Ba0.5Sr0.5TiO3 thin films grown with reduced strain on DyScO3 substrates by three-step technique Journal of Applied Physics. 113: 044108 |
| Kayis C, Ferreyra RA, Zhu C, et al. (2012) Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low-frequency noise and current-transient methods: Hot-phonon effects Proceedings of Spie - the International Society For Optical Engineering. 8262 |
| Zhu C, Wu M, Kayis C, et al. (2012) Degradation mechanism of InAlN/GaN based HFETs under high electric field stress Proceedings of Spie - the International Society For Optical Engineering. 8262 |
| Kayis C, Ferreyra RA, Zhu C, et al. (2012) The effect of barrier strain on the reliability of In x Al 1-xN/AlN/GaN heterostructure field-effect transistors Physica Status Solidi - Rapid Research Letters. 6: 163-165 |
| Liu H, Avrutin V, Zhu C, et al. (2011) Three-step deposition method for improvement of the dielectric properties of BST thin films Materials Research Society Symposium Proceedings. 1397: 38-43 |
| Zhu C, Kayis C, Wu M, et al. (2011) Reduction of flicker noise in AlGaN/GaN-Based HFETs after high electric-field stress Ieee Electron Device Letters. 32: 1513-1515 |