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Roman Y. Korotkov, Ph.D.

Affiliations: 
2001 Northwestern University, Evanston, IL 
Area:
Materials Science Engineering
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"Roman Korotkov"
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Bruce W. Wessels grad student 2001 Northwestern
 (Investigation of the point defect structure of epitaxial gallium nitride.)

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Publications

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Kim H, Bonsu RO, O'Donohue C, et al. (2015) Aerosol-assisted chemical vapor deposition of tungsten oxide films and nanorods from oxo tungsten(VI) fluoroalkoxide precursors. Acs Applied Materials & Interfaces. 7: 2660-7
Koley A, O'Donohue CT, Nolan MM, et al. (2015) Effect of the Ligand Structure on Chemical Vapor Deposition of WNxCy Thin Films from Tungsten Nitrido Complexes of the Type WN(NR2)3 Chemistry of Materials. 27: 8326-8336
Schwenzer B, Wang L, Swensen JS, et al. (2012) Tuning the optical properties of mesoporous TiO2 films by nanoscale engineering. Langmuir : the Acs Journal of Surfaces and Colloids. 28: 10072-81
Korotkov RY. (2012) Properties of TCO anodes deposited by atmospheric pressure chemical vapor deposition and their application to OLED lighting Proceedings of Spie - the International Society For Optical Engineering. 8263
Korotkov RY, Ricou P, Fang L, et al. (2011) Properties of TCO anodes deposited by APCVD and their applications to OLEDs Proceedings of Spie - the International Society For Optical Engineering. 7939
Korotkov RY, Gupta R, Ricou P, et al. (2008) Atmospheric plasma discharge chemical vapor deposition of SnOx thin films using various tin precursors Thin Solid Films. 516: 4720-4727
Abdel-Motaleb IM, Korotkov RY. (2005) Modeling of electron mobility in GaN materials Journal of Applied Physics. 97
Alivov YI, Chernykh AV, Chukichev MV, et al. (2005) Thin polycrystalline zinc oxide films obtained by oxidation of metallic zinc films Thin Solid Films. 473: 241-246
Korotkov RY, Farran AJE, Gulp T, et al. (2004) Transport properties of undoped and NH 3-doped polycrystalline SnO 2 with low background electron concentrations Journal of Applied Physics. 96: 6445-6453
Han B, Korotkov RY, Wessels BW, et al. (2004) Optical properties of Mn 4+ ions in GaN:Mn codoped with Mg acceptors Applied Physics Letters. 84: 5320-5322
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