Yik K. Ee, Ph.D.
Affiliations: | 2010 | Electrical Engineering | Lehigh University, Bethlehem, PA, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Yik Ee"Parents
Sign in to add mentorNelson Tansu | grad student | 2010 | Lehigh University | |
(Reduced dislocation engineering and enhanced light extraction efficiency of III-nitride light emitting diodes.) |
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Publications
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Li XH, Zhu P, Liu G, et al. (2013) Light extraction efficiency enhancement of III-nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays Ieee/Osa Journal of Display Technology. 9: 324-332 |
Li XH, Ee YK, Song R, et al. (2011) Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO 2 microsphere arrays Proceedings of Spie - the International Society For Optical Engineering. 7954 |
Tansu N, Zhao H, Zhang J, et al. (2011) Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: Device physics and epitaxy engineering Proceedings of Spie - the International Society For Optical Engineering. 7954 |
Li XH, Song R, Ee YK, et al. (2011) Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios Ieee Photonics Journal. 3: 489-499 |
Cao W, Biser JM, Ee YK, et al. (2011) Dislocation structure of GaN films grown on planar and nano-patterned sapphire Journal of Applied Physics. 110 |
Li XH, Ee YK, Song R, et al. (2011) Fabrication of self-assembled silica/polystyrene microlens arrays for light extraction enhancement in nitride light-emitting diodes 2011 Conference On Lasers and Electro-Optics: Laser Science to Photonic Applications, Cleo 2011 |
Zhao H, Liu G, Ee YK, et al. (2010) Novel device concepts for high-efficiency InGaN-based light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7602 |
Ee YK, Li XH, Biser J, et al. (2010) Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7617 |
Tansu N, Zhao H, Liu G, et al. (2010) III-nitride photonics Ieee Photonics Journal. 2: 236-243 |
Ee YK, Li XH, Biser J, et al. (2010) Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire Journal of Crystal Growth. 312: 1311-1315 |