Pirouz Pirouz

Affiliations: 
Materials Science and Engineering Case Western Reserve University, Cleveland Heights, OH, United States 
Area:
Materials Science Engineering
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"Pirouz Pirouz"

Children

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Jinwei Yang grad student Case Western
Chacko Jacob grad student 1992-1997 Case Western
Kasif Teker grad student 2001 Case Western
Shanling Wang grad student 2006 Case Western
Sheng Jin grad student 2011 Case Western
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Publications

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Junesand C, Gau MH, Sun YT, et al. (2014) Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth Materials Express. 4: 41-53
Pirouz P. (2013) The concept of quasi-Fermi level and expansion of faulted loops in SiC under minority carrier injection Physica Status Solidi (a) Applications and Materials Science. 210: 181-186
Bayu-Aji LB, Pirouz P. (2010) Brittle-to-ductile transition temperature in InP Physica Status Solidi (a) Applications and Materials Science. 207: 1190-1195
Speer KM, Neudeck PG, Spry DJ, et al. (2008) Cross-sectional TEM and KOH-Etch studies of extended defects in 3C-SiC p + n junction diodes grown on 4H-SiC mesas Journal of Electronic Materials. 37: 672-680
Speer KM, Spry DJ, Trunek AJ, et al. (2007) Absence of dislocation motion in 3C-SiC pn diodes under forward bias Materials Science Forum. 556: 223-226
Wang S, Pirouz P. (2007) Mechanical properties of undoped GaAs. III: Indentation experiments Acta Materialia. 55: 5526-5537
Wang S, Pirouz P. (2007) Mechanical properties of undoped GaAs. II: The brittle-to-ductile transition temperature Acta Materialia. 55: 5515-5525
Wang S, Pirouz P. (2007) Mechanical properties of undoped GaAs. Part I: Yield stress measurements Acta Materialia. 55: 5500-5514
Zhang Z, Stahlbush RE, Pirouz P, et al. (2007) Characteristics of dislocation half-loop arrays in 4H-SiC homo-epilayer Journal of Electronic Materials. 36: 539-542
Speer KM, Neudeck PG, Crimp MA, et al. (2007) Possible formation mechanisms for surface defects observed in heteroepitaxially grown 3C-SiC Physica Status Solidi (a) Applications and Materials Science. 204: 2216-2221
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