Pirouz Pirouz
Affiliations: | Materials Science and Engineering | Case Western Reserve University, Cleveland Heights, OH, United States |
Area:
Materials Science EngineeringGoogle:
"Pirouz Pirouz"Children
Sign in to add traineeJinwei Yang | grad student | Case Western | |
Chacko Jacob | grad student | 1992-1997 | Case Western |
Kasif Teker | grad student | 2001 | Case Western |
Shanling Wang | grad student | 2006 | Case Western |
Sheng Jin | grad student | 2011 | Case Western |
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Publications
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Junesand C, Gau MH, Sun YT, et al. (2014) Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth Materials Express. 4: 41-53 |
Pirouz P. (2013) The concept of quasi-Fermi level and expansion of faulted loops in SiC under minority carrier injection Physica Status Solidi (a) Applications and Materials Science. 210: 181-186 |
Bayu-Aji LB, Pirouz P. (2010) Brittle-to-ductile transition temperature in InP Physica Status Solidi (a) Applications and Materials Science. 207: 1190-1195 |
Speer KM, Neudeck PG, Spry DJ, et al. (2008) Cross-sectional TEM and KOH-Etch studies of extended defects in 3C-SiC p + n junction diodes grown on 4H-SiC mesas Journal of Electronic Materials. 37: 672-680 |
Speer KM, Spry DJ, Trunek AJ, et al. (2007) Absence of dislocation motion in 3C-SiC pn diodes under forward bias Materials Science Forum. 556: 223-226 |
Wang S, Pirouz P. (2007) Mechanical properties of undoped GaAs. III: Indentation experiments Acta Materialia. 55: 5526-5537 |
Wang S, Pirouz P. (2007) Mechanical properties of undoped GaAs. II: The brittle-to-ductile transition temperature Acta Materialia. 55: 5515-5525 |
Wang S, Pirouz P. (2007) Mechanical properties of undoped GaAs. Part I: Yield stress measurements Acta Materialia. 55: 5500-5514 |
Zhang Z, Stahlbush RE, Pirouz P, et al. (2007) Characteristics of dislocation half-loop arrays in 4H-SiC homo-epilayer Journal of Electronic Materials. 36: 539-542 |
Speer KM, Neudeck PG, Crimp MA, et al. (2007) Possible formation mechanisms for surface defects observed in heteroepitaxially grown 3C-SiC Physica Status Solidi (a) Applications and Materials Science. 204: 2216-2221 |