Shuji Nakamura
Affiliations: | Electrical & Computer Engineering | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringWebsite:
https://www.nobelprize.org/prizes/physics/2014/nakamura/facts/Google:
"Shuji Nakamura"Bio:
https://www.ucsb.edu/about/faculty-and-alumni/shuji-nakamura
https://engineering.ucsb.edu/people/shuji-nakamura
https://www.nae.edu/128641/Dr-Shuji-Nakamura-
The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources
Children
Sign in to add traineeTadao Hashimoto | grad student | 2005 | UC Santa Barbara |
Troy J. Baker | grad student | 2006 | UC Santa Barbara |
Paul M. Pattison | grad student | 2006 | UC Santa Barbara |
Rajat Sharma | grad student | 2006 | UC Santa Barbara |
John F. Kaeding | grad student | 2007 | UC Santa Barbara |
Edward R. Letts | grad student | 2007 | UC Santa Barbara |
Derrick S. Kamber | grad student | 2008 | UC Santa Barbara |
You-Da Lin | grad student | 2010 | UC Santa Barbara |
Roy B. Chung | grad student | 2011 | UC Santa Barbara |
Anurag Tyagi | grad student | 2011 | UC Santa Barbara |
Chia-Yen Huang | grad student | 2012 | UC Santa Barbara |
Siddha Pimputkar | grad student | 2012 | UC Santa Barbara |
Yuji Zhao | grad student | 2012 | UC Santa Barbara |
Casey O. Holder | grad student | 2013 | UC Santa Barbara |
Po S. Hsu | grad student | 2013 | UC Santa Barbara |
Alexander Sztein | grad student | 2013 | UC Santa Barbara |
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Publications
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Ewing JJ, Lynsky C, Wong MS, et al. (2023) High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates. Optics Express. 31: 41351-41360 |
Yao Y, Li H, Wang M, et al. (2023) High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization. Optics Express. 31: 28649-28657 |
Li P, Li H, Yao Y, et al. (2023) Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes. Optics Express. 31: 7572-7578 |
Anderson R, Zhang H, Trageser E, et al. (2022) Green edge emitting lasers with porous GaN cladding. Optics Express. 30: 27674-27682 |
Reilly CE, Keller S, Nakamura S, et al. (2021) Metalorganic chemical vapor deposition of InN quantum dots and nanostructures. Light, Science & Applications. 10: 150 |
Li P, Li H, Yao Y, et al. (2021) Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control. Optics Express. 29: 22001-22007 |
Back J, Wong MS, Kearns J, et al. (2020) Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length. Optics Express. 28: 29991-30003 |
Zhang H, Cohen DA, Chan P, et al. (2020) High performance of a semipolar InGaN laser with a phase-shifted embedded hydrogen silsesquioxane (HSQ) grating. Optics Letters. 45: 5844-5847 |
Chow YC, Lee C, Wong MS, et al. (2020) Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors. Optics Express. 28: 23796-23805 |
Khoury M, Li H, Bonef B, et al. (2020) 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates. Optics Express. 28: 18150-18159 |