Michael Yakimov, Ph.D.
Affiliations: | 2004 | State University of New York, Albany, Albany, NY, United States |
Area:
Condensed Matter PhysicsGoogle:
"Michael Yakimov"Parents
Sign in to add mentor| Serge Oktyabrsky | grad student | 2004 | SUNY Albany | |
| (Growth dynamics and laser applications of indium arsenide quantum dots in gallium arsenide/aluminum gallium arsenide structures.) | ||||
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Publications
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| Sasaki S, Dropiewski K, Madisetti S, et al. (2020) Anomalous minority carrier behavior induced by chemical surface passivation solution in p-type GaSb metal–oxide–semiconductor capacitors on Si substrates Journal of Vacuum Science & Technology B. 38: 52204 |
| Dropiewski K, Minns A, Yakimov M, et al. (2020) Ultrafast Waveguiding Quantum Dot Scintillation Detector Nuclear Instruments and Methods in Physics Research Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 954: 161472 |
| Dropiewski K, Minns A, Yakimov M, et al. (2020) Optical Properties of InAs Quantum Dots/GaAs Waveguides for Ultra-fast Scintillators Journal of Luminescence. 220: 116952 |
| Papa Rao SS, Hobbs C, Olson S, et al. (2018) (Invited) Materials and Processes for Superconducting Qubits and Superconducting Electronic Circuits on 300mm Wafers Ecs Transactions. 85: 151-161 |
| Lebedev DV, Kalyuzhnyy NA, Mintairov SA, et al. (2018) Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy Semiconductors. 52: 497-501 |
| Mintairov AM, Kapaldo J, Merz JL, et al. (2018) Control of Wigner localization and electron cavity effects in near-field emission spectra of In(Ga)P/GaInP quantum-dot structures Physical Review B. 97 |
| Sablon K, Sergeev A, Zhang X, et al. (2017) Selective Doping of Quantum Dot Nanomaterials for Managing Intersubband Absorption, Dark Current, and Photoelectron Lifetime Mrs Advances. 2: 759-766 |
| Zhang X, Mitin V, Sergeev A, et al. (2017) Effects of doping on photoelectron kinetics and characteristics of quantum dot infrared photodetector Proceedings of Spie. 10177: 1017729 |
| Dropiewski K, Tokranov V, Yakimov M, et al. (2017) MBE growth and digital etch of GaSb/InAs nanowires on Si for logic applications Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 02B115 |
| Sasaki S, Dropiewski K, Madisetti S, et al. (2017) Electrical properties related to growth defects in metamorphic GaSb films on Si Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 11203 |