P.R Mukund
Affiliations: | Microsystems Engineering | Rochester Institute of Technology, Rochester, NY, United States |
Area:
General Engineering, Electronics and Electrical EngineeringGoogle:
"P.R Mukund"
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Publications
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| Prilenski L, Mukund PR. (2018) A sub 1-volt subthreshold bandgap reference at the 14 nm FinFET node Microelectronics Journal. 79: 17-23 |
| Jorgensen EK, Mukund PR. (2016) A comparative study of multi-GHz LCVCOs designed in 28nm CMOS technology International System On Chip Conference. 2016: 82-87 |
| Pude M, Mukund PR, Burleson J. (2015) Positive feedback for gain enhancement in sub-100 nm multi-GHz CMOS amplifier design International Journal of Circuit Theory and Applications. 43: 111-124 |
| Bohannon E, Washburn C, Mukund PR. (2014) An ultra-thin oxide sub-1 v CMOS bandgap voltage reference International Journal of Circuit Theory and Applications. 42: 842-857 |
| Bohannon E, Washburn C, Mukund PR. (2011) Analog IC design in ultra-thin oxide CMOS technologies with significant direct tunneling-induced gate current Ieee Transactions On Circuits and Systems I: Regular Papers. 58: 645-653 |
| Urban C, Moon JE, Mukund PR. (2011) Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS processes Microelectronics Reliability. 51: 727-732 |
| Bohannon E, Urban C, Pude M, et al. (2010) Passive and active reduction techniques for on-chip high-frequency digital power supply noise Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 18: 157-161 |
| Pude M, Mukund PR, Singh P, et al. (2010) Amplifier gain enhancement with positive feedback Midwest Symposium On Circuits and Systems. 981-984 |
| Urban C, Moon JE, Mukund PR. (2010) Designing bulk-driven MOSFETs for ultra-low-voltage analogue applications Semiconductor Science and Technology. 25 |
| Bohannon E, Washburn C, Mukund PR. (2009) Investigating the BJT-like behavior of MOSFETs in ultra-deep-submicron CMOS technologies with significant gate current 2009 International Semiconductor Device Research Symposium, Isdrs '09 |