Neeraj Tripathi, Ph.D.
Affiliations: | 2011 | Nanoscale Science and Engineering-Nanoscale Engineering | State University of New York, Albany, Albany, NY, United States |
Area:
Nanotechnology, Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Neeraj Tripathi"Parents
Sign in to add mentor| Fatemeh Shahedipour-Sandvik | grad student | 2011 | SUNY Albany | |
| (Energy band engineering using polarization induced interface charges in MOCVD grown III-nitride heterojunction devices.) | ||||
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Publications
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| Kim B, Bae D, Zeitzoff P, et al. (2013) Investigation of Fixed Oxide Charge and Fin Profile Effects on Bulk FinFET Device Characteristics Ieee Electron Device Letters. 34: 1485-1487 |
| Tungare M, Leathersich JM, Tripathi N, et al. (2012) Crack-free III-nitride structures (> 3.5 μm) on silicon Materials Research Society Symposium Proceedings. 1324: 9-15 |
| Tompkins RP, Walsh TA, Derenge MA, et al. (2011) The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes Journal of Materials Research. 26: 2895-2900 |
| Shahedipour-Sandvik F, Tripathi N, Bell LD. (2011) AlGaN based III-nitride tunnel barrier hyperspectral detector for infrared detection Proceedings of Spie - the International Society For Optical Engineering. 8155 |
| Tripathi N, Bell LD, Shahedipour-Sandvik F. (2011) AlGaN based III-nitride tunnel barrier hyperspectral detector: Effect of internal polarization Journal of Applied Physics. 109 |
| Tripathi N, Bell LD, Nikzad S, et al. (2011) Novel Cs-free GaN photocathodes Journal of Electronic Materials. 40: 382-387 |
| Tungare M, Shi Y, Tripathi N, et al. (2011) A Tersoff-based interatomic potential for wurtzite AlN Physica Status Solidi (a) Applications and Materials Science. 208: 1569-1572 |
| Fahrenkopf NM, Jindal V, Tripathi N, et al. (2010) Exploiting phosphate dependent DNA immobilization on HfO2, ZrO2, and AlGaN for integrated biosensors Materials Research Society Symposium Proceedings. 1236: 115-120 |
| Tripathi N, Bell LD, Nikzad S, et al. (2010) Effect of n+ GaN cap polarization field on Cs-free GaN photocathode characteristics Applied Physics Letters. 97 |
| Tripathi N, Jindal V, Shahedipour-Sandvik F, et al. (2010) Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces Solid-State Electronics. 54: 1291-1294 |