Puneet H. Suvarna, Ph.D.
Affiliations: | 2014 | Nanoscale Science and Engineering-Nanoscale Engineering | State University of New York, Albany, Albany, NY, United States |
Area:
Materials Science Engineering, Electronics and Electrical Engineering, NanotechnologyGoogle:
"Puneet Suvarna"Parents
Sign in to add mentor| Fatemeh Shahedipour-Sandvik | grad student | 2014 | SUNY Albany | |
| (Development of novel technologies to enhance performance and reliability of III-Nitride avalanche photodiodes.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Nikzad S, Hoenk M, Jewell AD, et al. (2016) Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials. Sensors (Basel, Switzerland). 16 |
| Bulmer J, Suvarna P, Leathersich J, et al. (2015) Visible-blind APD heterostructure design with superior field confinement and low operating voltage Ieee Photonics Technology Letters. 28: 39-42 |
| Suvarna P, Bulmer J, Leathersich JM, et al. (2015) Ion implantation-based edge termination to improve III-N APD reliability and performance Ieee Photonics Technology Letters. 27: 498-501 |
| Hennessy J, Bell LD, Nikzad S, et al. (2014) Atomic-layer deposition for improved performance of III-N avalanche photodiodes Materials Research Society Symposium Proceedings. 1635 |
| Derenge MA, Kirchner KW, Jones KA, et al. (2014) Annealing studies of AlN capped, MOCVD grown GaN films Solid-State Electronics. 101: 23-28 |
| Leathersich J, Arkun E, Clark A, et al. (2014) Deposition of GaN films on crystalline rare earth oxides by MOCVD Journal of Crystal Growth. 399: 49-53 |
| Tompkins RP, Smith JR, Kirchner KW, et al. (2014) GaN power schottky diodes with drift layers grown on four substrates Journal of Electronic Materials. 43: 850-856 |
| Shahedipour-Sandvik F, Leathersich J, Tompkins RP, et al. (2013) Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy Semiconductor Science and Technology. 28 |
| Tungare M, Weng X, Leathersich JM, et al. (2013) Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate Journal of Applied Physics. 113 |
| Leathersich J, Suvarna P, Tungare M, et al. (2013) Homoepitaxial growth of non-polar AlN crystals using molecular dynamics simulations Surface Science. 617: 36-41 |