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Laurence P. Sadwick

Affiliations: 
1989- Electrical and Computer Engineering University of Utah, Salt Lake City, UT 
Area:
Materials Science Engineering
Website:
https://ieeexplore.ieee.org/author/37360367200
Google:
"Laurence Philip Sadwick" OR "Laurence P Sadwick" OR "Larry Sadwick"
Bio:

https://books.google.com/books?id=PPtkNwAACAAJ
DOI: 10.1557/PROC-148-291
https://www.researchgate.net/profile/Nicole-Herbots/publication/232028892_A_Model_for_Interdiffusion_at_Metal_Semiconductor_Interfaces_Conditions_for_Spiking/links/00463519ff73534232000000/A-Model-for-Interdiffusion-at-Metal-Semiconductor-Interfaces-Conditions-for-Spiking.pdf#page=297
DOI: 10.1557/PROC-144-595
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Parents

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Kang L. Wang grad student 1989 UCLA
R. Stanley Williams grad student 1989 UCLA (Chemistry Tree)
 (Material and Electrical Characterization of Platinum-gallium Intermetallic Contacts Grown by Molecular Beam Epitaxy on Gallium Arsenide)

Children

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Dongho Heo grad student 2005 University of Utah
Xiaojuan Wang grad student 2007 University of Utah
Jehn-Huar Chern grad student 2011 University of Utah

Collaborators

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Publications

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Ryu H, Kim CR, Lee J, et al. (2007) Chemical beam epitaxial growth of InP and GaP by using tertiarybutylbis (dimethylamino) phosphine Journal of the Korean Physical Society. 51: 2051-2055
Ryu HH, Jeon MH, Leem JY, et al. (2006) Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine Journal of Materials Science. 41: 8265-8270
Wang X, Sadwick LP. (2006) Kirchoff's law analysis of GaAs MESFETs and related devices at high temperatures Proceedings - 2006 Imaps International Conference and Exhibition On High Temperature Electronics, Hitec 2006. 187-193
Sadwick LP, Chern JH, Hwu RJ, et al. (2006) SSVDs: 500°C electronics for extreme environmental applications Proceedings - 2006 Imaps International Conference and Exhibition On High Temperature Electronics, Hitec 2006. 536-542
Sadwick LP, Chern JH, Nelson R, et al. (2006) A 500°C electronic package technology for continuous operation in extreme environments Proceedings - 2006 Imaps International Conference and Exhibition On High Temperature Electronics, Hitec 2006. 377-379
Wang X, Sadwick LP. (2006) A room temperature to 300°C enhanced curtice model with general applicability to field effect transistors Proceedings - 2006 Imaps International Conference and Exhibition On High Temperature Electronics, Hitec 2006. 194-201
Wang X, Sadwick LP. (2006) High temperature simulation of and comparison with experimental data of the electrically thermally enhanced substrate leakage In GaAs MESFETs Proceedings - 2006 Imaps International Conference and Exhibition On High Temperature Electronics, Hitec 2006. 339-344
Ryu HH, Choi HL, Sadwick LP. (2003) Effects of cracker cell temperature and V/III ratio on GaInP grown by chemical beam epitaxy using TIPGa, EDMIn and TBP Journal of Materials Science. 38: 3663-3668
Lin CH, Hwu RJ, Sadwick LP. (2003) Formation of microtwins in TmP/GaAs heterostructures Journal of Crystal Growth. 247: 77-83
Lin CH, Hwu RJ, Sadwick LP, et al. (2001) Molecular beam epitaxy growth of TmP/GaAs and transistor action in GaP/TmP/GaAs heterostructures Ieee Transactions On Electron Devices. 48: 2205-2209
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