Grigory S. Simin
Affiliations: | Electrical Engineering | University of South Carolina, Columbia, SC |
Area:
Electronics and Electrical EngineeringGoogle:
"Grigory Simin"Children
Sign in to add trainee| Aleksey Koudymov | grad student | 2003 | University of South Carolina |
| Naveen Tipirneni | grad student | 2007 | University of South Carolina |
| Ajay K. Sattu | grad student | 2011 | University of South Carolina |
| Faisal Jahan | grad student | 2013 | University of South Carolina |
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Publications
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| Floyd R, Hussain K, Mamun A, et al. (2020) Photonics integrated circuits using Al x Ga1−x N based UVC light-emitting diodes, photodetectors and waveguides Applied Physics Express. 13: 022003 |
| Gaevski M, Mollah S, Hussain K, et al. (2020) Ultrawide bandgap Al x Ga1–x N channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1 Applied Physics Express. 13: 94002 |
| Mollah S, Hussain K, Floyd R, et al. (2020) High‐Temperature Operation of Al x Ga 1− x N ( x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐ k Atomic Layer Deposited Gate Oxides Physica Status Solidi (a). 217: 1900802 |
| Floyd R, Hussain K, Mamun A, et al. (2020) An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices Physica Status Solidi (a). 217: 1900801 |
| Mollah S, Gaevski M, Hussain K, et al. (2019) Current collapse in high-Al channel AlGaN HFETs Applied Physics Express. 12: 074001 |
| Mollah S, Gaevski M, Chandrashekhar M, et al. (2019) Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric Semiconductor Science and Technology. 34: 125001 |
| Jewel MU, Alam MD, Mollah S, et al. (2019) Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence Applied Physics Letters. 115: 213502 |
| Hu X, Hwang S, Hussain K, et al. (2018) Doped Barrier Al 0.65 Ga 0.35 N/Al 0.40 Ga 0.60 N MOSHFET With SiO 2 Gate-Insulator and Zr-Based Ohmic Contacts Ieee Electron Device Letters. 39: 1568-1571 |
| Cywiński G, Yahniuk I, Kruszewski P, et al. (2018) Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications Applied Physics Letters. 112: 133502 |
| Muhtadi S, Hwang SM, Coleman A, et al. (2017) High Electron Mobility Transistors With Al 0.65 Ga 0.35 N Channel Layers on Thick AlN/Sapphire Templates Ieee Electron Device Letters. 38: 914-917 |