Saptarshi Das, Ph.D.
Affiliations: | 2013 | Electrical and Computer Engineering | Purdue University, West Lafayette, IN, United States |
Area:
Nanoscience, Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Saptarshi Das"Parents
Sign in to add mentor| Joerg Appenzeller | grad student | 2013 | Purdue | |
| (Novel nano materials for high performance logic and memory devices.) | ||||
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Publications
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| Sebastian A, Pendurthi R, Choudhury TH, et al. (2021) Benchmarking monolayer MoS and WS field-effect transistors. Nature Communications. 12: 693 |
| Wali A, Kundu S, Arnold AJ, et al. (2021) Satisfiability Attack-Resistant Camouflaged Two-Dimensional Heterostructure Devices. Acs Nano |
| Arnold AJ, Schulman DS, Das S. (2020) Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors. Acs Nano |
| Singh VK, Pendurthi R, Nasr JR, et al. (2020) Study on the Growth Parameters, Electrical, and Optical Behaviors of 2D Tungsten Disulfide. Acs Applied Materials & Interfaces |
| Sengupta P, Das S. (2020) Photon-assisted heat engines in the THz regime Journal of Applied Physics. 127: 24305 |
| Ghosh A, Noble J, Sebastian A, et al. (2020) Digital holography for non-invasive quantitative imaging of two-dimensional materials Journal of Applied Physics. 127: 84901 |
| Das S, Dodda A, Das S. (2019) A biomimetic 2D transistor for audiomorphic computing. Nature Communications. 10: 3450 |
| Zhang F, Lu Y, Schulman DS, et al. (2019) Carbon doping of WS monolayers: Bandgap reduction and p-type doping transport. Science Advances. 5: eaav5003 |
| Zhang X, Zhang F, Wang Y, et al. (2019) Defect-Controlled Nucleation and Orientation of WSe on hBN - A Route to Single Crystal Epitaxial Monolayers. Acs Nano |
| Arnold AJ, Shi T, Jovanovic I, et al. (2019) Extraordinary Radiation Hardness of Atomically Thin MoS2. Acs Applied Materials & Interfaces |