Nobuhiko P. Kobayashi

Affiliations: 
Electrical Engineering University of California, Santa Cruz, Santa Cruz, CA, United States 
Area:
Materials Science Engineering, Nanotechnology, Nanoscience
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"Nobuhiko Kobayashi"

Parents

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P Daniel Dapkus grad student USC
Anupam Madhukar grad student USC (BME Tree)
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Publications

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Diaz Leon JJ, Fryauf DM, Volk JE, et al. (2019) Aluminum Oxide Waveguides for Improved Transmission in the Visible and Near-Infrared Spectrum Ieee Photonics Technology Letters. 31: 43-45
Ali S, Bae J, Lee CH, et al. (2018) Resistive switching device with highly-asymmetric current-voltage characteristics: A solution to backward sneak current in passive crossbar arrays. Nanotechnology
Sevic JF, Kobayashi NP. (2018) Self-consistent continuum-based transient simulation of electroformation of niobium oxide-tantalum dioxide selector-memristor structures Journal of Applied Physics. 124: 164501
Diaz Leon JJ, Feigenbaum E, Kobayashi NP, et al. (2017) Design Parameters for Subwavelength Transparent Conductive Nanolattices. Acs Applied Materials & Interfaces
León JJD, Norris KJ, Sevic JF, et al. (2016) Integration of a niobium oxide selector on a tantalum oxide memristor by local oxidation using Joule heating Proceedings of Spie. 9924: 5
León JJD, Fryauf DM, Cormia RD, et al. (2016) Study of the formation of native oxide on copper at room temperature Proceedings of Spie. 9924: 7
Fryauf DM, Leon JJD, Phillips AC, et al. (2016) Effects of ion bombardment on silver/dielectric interfaces with ion assisted e-beam evaporation Proceedings of Spie. 9924
Diaz Leon JJ, Norris KJ, Hartnett RJ, et al. (2016) Nonlinear current–voltage characteristics based on semiconductor nanowire networks enable a new concept in thermoelectric device optimization Applied Physics a: Materials Science and Processing. 122
Norris KJ, Yang JJ, Kobayashi NP. (2015) Structural and Chemical Analysis of Nanoscale Resistive Switching Devices: Assessment on Nonlinear Properties Mrs Proceedings. 1805
Norris KJ, Yang JJ, Kobayashi NP. (2015) TEM and EELS Study on TaOx-based Nanoscale Resistive Switching Devices Mrs Proceedings. 1805
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