Ali Mokhberi, Ph.D.
Affiliations: | 2003 | Stanford University, Palo Alto, CA |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Ali Mokhberi"Parents
Sign in to add mentor| James D. Plummer | grad student | 2003 | Stanford | |
| (Dopant-dopant and dopant-defect processes underlying activation kinetics.) | ||||
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Publications
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| Aboy M, Pelaz L, Marqués LA, et al. (2003) Atomistic modeling of B activation and deactivation for ultra-shallow junction formation International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2003: 151-154 |
| Aboy M, Pelaz L, Marqués LA, et al. (2003) Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles Applied Physics Letters. 83: 4166-4168 |
| Mokhberi A, Griffin PB, Plummer JD, et al. (2002) A comparative study of dopant activation in boron, BF2, arsenic, and phosphorus implanted silicon Ieee Transactions On Electron Devices. 49: 1183-1191 |
| Mokhberi A, Kasnavi R, Griffin PB, et al. (2002) Fluorine interaction with point defects, boron, and arsenic in ion-implanted Si Applied Physics Letters. 80: 3530-3532 |
| Mokhberi A, Pelaz L, Aboy M, et al. (2002) A physics based approach to ultra-shallow p+-junction formation at the 32 nm node Technical Digest - International Electron Devices Meeting. 879-882 |