Qiqing C. Ouyang, Ph.D.
Affiliations: | 2000 | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Electronics and Electrical EngineeringGoogle:
"Qiqing Ouyang"Parents
Sign in to add mentor| Sanjay K. Banerjee | grad student | 2000 | UT Austin | |
| (Physical model enhancement and exploration of bandgap engineering in novel sub-100nm pMOSFETs.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Koester SJ, Saenger KL, Chu JO, et al. (2005) Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping Ieee Electron Device Letters. 26: 817-819 |
| Koester SJ, Saenger KL, Chu JO, et al. (2005) Laterally scaled Si-Si |
| Koester SJ, Dehlinger G, Schaub JD, et al. (2005) Germanium-on-insulator photodetectors 2005 Ieee International Conference On Group Iv Photonics. 2005: 171-173 |
| Koester SJ, Saenger KL, Chu JO, et al. (2004) Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping Device Research Conference - Conference Digest, Drc. 107-108 |
| Koester SJ, Saenger KL, Chu JO, et al. (2004) SiGe MODFETS: Overview and issues for sub-100 nm gate-length scaling Proceedings - Electrochemical Society. 7: 449-458 |
| Koester SJ, Chu JO, Saenger KL, et al. (2004) High-performance SiGe MODFET technology Materials Research Society Symposium Proceedings. 809: 171-179 |
| Koester SJ, Saenger KL, Chu JO, et al. (2003) 80 nm gate-length Si/Si |
| Singh DV, Koester SJ, Chu JO, et al. (2003) Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs Electronics Letters. 39: 570-572 |
| Chen X, Ouyang QC, Wang G, et al. (2002) Improved hot-carrier and short-channel performance in vertical nMOSFETs with graded channel doping Ieee Transactions On Electron Devices. 49: 1962-1968 |
| Ouyang QC, Koester SJ, Chu JO, et al. (2002) A comprehensive simulation study of strained-Si/SiGe nMODFET scaling for RF applications International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2002: 59-62 |