Sankaran Jayanarayanan, Ph.D.
Affiliations: | 2004 | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Electronics and Electrical EngineeringGoogle:
"Sankaran Jayanarayanan"Parents
Sign in to add mentorSanjay K. Banerjee | grad student | 2004 | UT Austin | |
(Silicon-based vertical MOSFETs.) |
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Publications
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Jayanarayanan SK, Dey S, Donnelly JP, et al. (2006) A novel 50 nm vertical MOSFET with a dielectric pocket Solid-State Electronics. 50: 897-900 |
Ioannou DP, Zhao E, Cooper S, et al. (2004) New insights on the hot-carrier characteristics of 55nm PD SOI MOSEETs Proceedings - Ieee International Soi Conference. 205-206 |
Ouyang Q, Chen XD, Jayanarayanan SK, et al. (2002) Performance enhancement in vertical sub-100 nm nMOSFETs with graded doped channels Iccdcs 2002 - 4th Ieee International Caracas Conference On Devices, Circuits and Systems |
Jayanarayanan S, Prins F, Chen X, et al. (2002) Enhanced mobility in 100 nm strained SiGe vertical P-MOSFETs fabricated by UHVCVD Materials Research Society Symposium - Proceedings. 686: 75-79 |
Jayanarayanan S, Prins F, Chen X, et al. (2001) Enhanced mobility in 100 nm strained SiGe vertical P-MOSFETs fabricated by UHVCVD Mrs Proceedings. 686: 75-79 |
Chen X, Liu KC, Ouyang QC, et al. (2001) Hole and electron mobility enhancement in strained SiGe vertical MOSFETs Ieee Transactions On Electron Devices. 48: 1975-1980 |
Chen X, Ouyang Q, Jayanarayanan SK, et al. (2001) Vertical p-type high-mobility heterojunction metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 78: 3334-3336 |
Chen X, Liu KC, Jayanarayanan SK, et al. (2001) Electron mobility enhancement in strained SiGe vertical n-type metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 78: 377-379 |
Chen X, Ouyang Q, Jayanarayanan SK, et al. (2001) Asymmetric Si/Si |
Chen X, Ouyang Q, Jayanarayanan SK, et al. (2001) Si |