Yueran Liu, D.Eng.

Affiliations: 
2007 Electrical and Computer Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
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"Yueran Liu"

Parents

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Sanjay K. Banerjee grad student 2007 UT Austin
 (Novel flash memory with nanocrystal floating gate.)
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Publications

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Ablikim M, Achasov MN, Ahmed S, et al. (2018) Measurement of the Absolute Branching Fraction of the Inclusive Decay Λ_{c}^{+}→Λ+X. Physical Review Letters. 121: 062003
Bei WJ, Wang K, Li HL, et al. (2017) Safe Hydration Volume to Prevent Contrast-Induced Acute Kidney Injury and Worsening Heart Failure in Patients with Heart Failure and Preserved Ejection Fraction Following Cardiac Catheterization. Journal of Cardiovascular Pharmacology
Ablikim M, Achasov MN, Ahmed S, et al. (2017) Evidence of Two Resonant Structures in e^{+}e^{-}→π^{+}π^{-}h_{c}. Physical Review Letters. 118: 092002
Ablikim M, Achasov MN, Ahmed S, et al. (2017) Precise Measurement of the e^{+}e^{-}→π^{+}π^{-}J/ψ Cross Section at Center-of-Mass Energies from 3.77 to 4.60 GeV. Physical Review Letters. 118: 092001
Ablikim M, Achasov MN, Ai XC, et al. (2017) Amplitude Analysis of the Decays η^{'}→π^{+}π^{-}π^{0} and η^{'}→π^{0}π^{0}π^{0}. Physical Review Letters. 118: 012001
Ablikim M, Achasov MN, Ahmed S, et al. (2016) Measurement of Singly Cabibbo Suppressed Decays Λ_{c}^{+}→pπ^{+}π^{-} and Λ_{c}^{+}→pK^{+}K^{-}. Physical Review Letters. 117: 232002
Guo XS, Lin KY, Li HL, et al. (2016) Preprocedural High-Sensitivity C-Reactive Protein Predicts Contrast-Induced Nephropathy and Long-Term Outcome After Coronary Angiography. Angiology
Liu H, Winkenwerder W, Liu Y, et al. (2008) Core-shell germanium-silicon nanocrystal floating gate for nonvolatile memory applications Ieee Transactions On Electron Devices. 55: 3610-3614
Tang S, Mao C, Liu Y, et al. (2007) Protein-Mediated Nanocrystal Assembly for Flash Memory Fabrication Ieee Transactions On Electron Devices. 54: 433-438
Liu Y, Dey S, Tang S, et al. (2006) Improved performance of SiGe nanocrystal memory with VARIOT tunnel barrier Ieee Transactions On Electron Devices. 53: 2598-2602
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