Joseph P. Donnelly, Ph.D.
Affiliations: | 2009 | Electrical Engineering | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Electronics and Electrical EngineeringGoogle:
"Joseph Donnelly"Parents
Sign in to add mentor| Sanjay K. Banerjee | grad student | 2009 | UT Austin | |
| (Metal-oxide-semiconductor devices based on epitaxial germanium layers grown selectively directly on silicon substrates by ultra-high-vacuum chemical vapor deposition.) | ||||
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| Jamil M, Liu ES, Ferdousi F, et al. (2010) Effects of Si-cap thickness and temperature on device performance of Si/Ge |
| Liu E, Kelly DQ, Donnelly JP, et al. (2009) Negative Differential Resistance in Buried-Channel $\hbox{Ge}_{x} \hbox{C}_{1 - x}$ pMOSFETs Ieee Electron Device Letters. 30: 136-138 |
| Jamil M, Donnelly JP, Lee S, et al. (2008) A Comprehensive Study of Growth Techniques & Characterization of Epitaxial Ge1−xCx (111) Layers Grown Directly on Si (111) for MOS Applications Mrs Proceedings. 1068 |
| Donnelly JP, Kelly DQ, Garcia-Gutierrez DI, et al. (2008) High mobility strained Ge PMOSFETs with high-κ gate dielectric and metal gate on Si substrate Electronics Letters. 44: 240-241 |
| Kelly DQ, Donnelly JP, Dey S, et al. (2006) BC high-/spl kappa//metal gate Ge/C alloy pMOSFETs fabricated directly on Si (100) substrates Ieee Electron Device Letters. 27: 265-268 |
| Kelly DQ, Wiedmann I, Donnelly JP, et al. (2006) Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications Applied Physics Letters. 88: 152101 |
| Jayanarayanan SK, Dey S, Donnelly JP, et al. (2006) A novel 50 nm vertical MOSFET with a dielectric pocket Solid-State Electronics. 50: 897-900 |
| Staecker P, Lindley WT, Murphy RA, et al. (1974) RELIABILITY OF SILICON AND GALLIUM ARSENIDE K//A-BAND IMPATT DIODES . 293-297 |
| Riben AR, Donnelly JP, Feucht DL. (1965) Electrical Characteristics of Ge-GaAs and Ge-Si p-n Heterojunctions Ieee Transactions On Electron Devices. 12: 511 |