Ronald D. Schrimpf
Affiliations: | Electrical Engineering | Vanderbilt University, Nashville, TN |
Area:
Electronics and Electrical Engineering, Aerospace EngineeringWebsite:
https://engineering.vanderbilt.edu/bio/ronald-schrimpfGoogle:
"Ronald David Schrimpf" OR "Ronald D Schrimpf"Bio:
https://www.proquest.com/openview/6aae70d342a1a535942a8ebcff705ca8/1
Parents
Sign in to add mentor| Raymond M. Warner | grad student | 1986 | UMN (Physics Tree) | |
| (Prototype - Device Fabrication and Modeling for All - Semiconductor Three - Dimensional Integrated Circuits) | ||||
Children
Sign in to add trainee| Hugh J. Barnaby | grad student | 2002 | Vanderbilt |
| Aditya P. Karmarkar | grad student | 2005 | Vanderbilt |
| Philippe Adell | grad student | 2006 | Vanderbilt |
| Alan D. Tipton | grad student | 2008 | Vanderbilt |
| Matthew J. Gadlage | grad student | 2010 | Vanderbilt |
| Brian Sierawski | grad student | 2011 | Vanderbilt |
| Nathaniel A. Dodds | grad student | 2012 | Vanderbilt |
| Farah El Mamouni | grad student | 2012 | Vanderbilt |
| David R. Hughart | grad student | 2012 | Vanderbilt |
| Nadia Rezzak | grad student | 2012 | Vanderbilt |
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Publications
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| Witczak SC, Messenger SR, Fleetwood DM, et al. (2019) Damage Separation in a Bipolar Junction Transistor Following Irradiation With 250-MeV Protons Ieee Transactions On Nuclear Science. 66: 795-800 |
| Borghello G, Faccio F, Lerario E, et al. (2018) Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses Ieee Transactions On Nuclear Science. 65: 1482-1487 |
| Wang PF, Zhang EX, Chuang KH, et al. (2018) X-Ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices Ieee Transactions On Nuclear Science. 65: 1519-1524 |
| Wang P, Sternberg AL, Kozub JA, et al. (2018) Analysis of TPA Pulsed-Laser-Induced Single-Event Latchup Sensitive-Area Ieee Transactions On Nuclear Science. 65: 502-509 |
| Faccio F, Borghello G, Lerario E, et al. (2018) Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses Ieee Transactions On Nuclear Science. 65: 164-174 |
| Barnaby HJ, Schrimpf RD, Galloway KF, et al. (2017) Displacement Damage in Bipolar Junction Transistors: Beyond Messenger-Spratt Ieee Transactions On Nuclear Science. 64: 149-155 |
| Narasimham B, Hatami S, Anvar A, et al. (2015) Bias Dependence of Single-Event Upsets in 16 nm FinFET D-Flip-Flops Ieee Transactions On Nuclear Science |
| DIggins ZJ, Mahadevan N, Pitt EB, et al. (2015) Bayesian Inference Modeling of Total Ionizing Dose Effects on System Performance Ieee Transactions On Nuclear Science. 62: 2517-2524 |
| Weeden-Wright SL, King MP, Hooten NC, et al. (2015) Effects of energy-deposition variability on soft error rate prediction Ieee Transactions On Nuclear Science. 62: 2181-2186 |
| Reed RA, Weller RA, Mendenhall MH, et al. (2015) Physical Processes and Applications of the Monte Carlo Radiative Energy Deposition (MRED) Code Ieee Transactions On Nuclear Science |