MVS Chandrashekhar
Affiliations: | Electrical Engineering | University of South Carolina, Columbia, SC |
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Optics PhysicsWebsite:
https://sc.edu/study/colleges_schools/engineering_and_computing/faculty-staff/chandrshekharmvs.phpGoogle:
"MVS Chandrashekhar"Bio:
Parents
Sign in to add mentorMichael G Spencer | grad student | 2007 | Cornell (Physics Tree) | |
(Demonstration of a 4 hydrogen silicon carbide betavoltaic cell.) |
Children
Sign in to add traineeBiplob K. Daas | grad student | 2012 | University of South Carolina |
Kevin M. Daniels | grad student | 2014 | University of South Carolina |
Shamaita S. Shetu | grad student | 2014 | University of South Carolina |
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Publications
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Straker M, Chauhan A, Sinha M, et al. (2020) Growth of high purity zone-refined Boron Carbide single crystals by Laser Diode Floating Zone method Journal of Crystal Growth. 543: 125700 |
Jewel MU, Alam MD, Mollah S, et al. (2019) Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence Applied Physics Letters. 115: 213502 |
Muhtadi S, Hwang SM, Coleman A, et al. (2017) High Electron Mobility Transistors With Al 0.65 Ga 0.35 N Channel Layers on Thick AlN/Sapphire Templates Ieee Electron Device Letters. 38: 914-917 |
Barker BG, Chava VSN, Daniels KM, et al. (2017) Sub-bandgap response of graphene/SiC Schottky emitter bipolar phototransistor examined by scanning photocurrent microscopy 2d Materials. 5: 011003 |
Jahangir I, Koley G, Chandrashekhar MVS. (2017) Back gated FETs fabricated by large-area, transfer-free growth of a few layer MoS2 with high electron mobility Applied Physics Letters. 110: 182108 |
Uddin MA, Singh A, Daniels K, et al. (2016) Impedance spectroscopic analysis of nanoparticle functionalized graphene/p-Si Schottky diode sensors Japanese Journal of Applied Physics. 55: 110312 |
Daniels KM, Obe A, Daas BK, et al. (2016) Metal Catalyzed Electrochemical Synthesis of Hydrocarbons from Epitaxial Graphene Journal of the Electrochemical Society. 163: E130-E134 |
Chava VSN, Omar SU, Brown G, et al. (2016) Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection Applied Physics Letters. 108 |
Rana T, Chandrashekhar MVS, Daniels K, et al. (2016) SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF |
Rana T, Chandrashekhar MVS, Daniels K, et al. (2015) Epitaxial growth of graphene on SiC by Si selective etching using SiF4in an inert ambient Japanese Journal of Applied Physics. 54 |