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Theodore D. Moustakas

Affiliations: 
Materials Science and Engineering Boston University, Boston, MA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Condensed Matter Physics
Website:
http://people.bu.edu/tdm/
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"Theodore Moustakas"
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Parents

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Kurt D. Weiser grad student 1974 Columbia
 (Transport and recombination properties of amorphous arsenic telluride)

Children

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Mira Misra grad student 2000 Boston University
Hock M. Ng grad student 2000 Boston University
Eleftherios Iliopoulos grad student 2002 Boston University
Anand V. Sampath grad student 2002 Boston University
Anirban Bhattacharyya grad student 2005 Boston University
Ian Friel grad student 2005 Boston University
Jasper S. Cabalu grad student 2006 Boston University
Ramya Chandrasekaran grad student 2008 Boston University
Tai-Chou P. Chen grad student 2008 Boston University
Yitao Liao grad student 2011 Boston University
Chen-Kai Kao grad student 2012 Boston University
Adam L. Moldawer grad student 2013 Boston University

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Publications

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Stagarescu CB, Duda L, Smith KE, et al. (2019) Electronic structure of GaN measured using soft-x-ray emission and absorption. Physical Review. B, Condensed Matter. 54: R17335-R17338
Dimitrakopulos GP, Vasileiadis IG, Bazioti C, et al. (2018) Compositional and strain analysis of In(Ga)N/GaN short period superlattices Journal of Applied Physics. 123: 24304
Jovic V, Moser S, Ulstrup S, et al. (2017) How Indium Nitride Senses Water. Nano Letters
Moustakas TD, Paiella R. (2017) Optoelectronic Device Physics and Technology of Nitride Semiconductors from the UV to the Terahertz: a review. Reports On Progress in Physics. Physical Society (Great Britain)
Brummer G, Nothern D, Moustakas TD. (2017) Structural and Optical Properties of Al0.30Ga0.70N/AlN Multiple Quantum Wells Grown on Vicinal 4H p-SiC Substrates by Molecular Beam Epitaxy Mrs Advances. 2: 271-276
Sun H, Yin J, Pecora EF, et al. (2017) Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates Ieee Photonics Journal. 9: 1-9
Woodward JM, Nikiforov AY, Ludwig KF, et al. (2017) Analysis of InGaN nanodots grown by droplet heteroepitaxy using grazing incidence small-angle X-ray scattering and electron microscopy Journal of Applied Physics. 122: 065305
Ziade E, Yang J, Brummer G, et al. (2017) Thickness dependent thermal conductivity of gallium nitride Applied Physics Letters. 110: 31903
Moustakas TD. (2016) Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy Mrs Communications. 6: 247-269
Sun H, Piquette A, Raukas M, et al. (2016) Enhancement of Yellow Light Extraction Efficiency of Y 3 Al 5 O 12 :Ce 3+ Ceramic Converters Using a 2-D TiO 2 Hexagonal-Lattice Nanocylinder Photonic Crystal Layer Ieee Photonics Journal. 8: 1-10
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