Ramon R. Collazo, Ph.D.
Affiliations: | 2002 | North Carolina State University, Raleigh, NC |
Area:
Materials Science Engineering, Condensed Matter PhysicsGoogle:
"Ramon Collazo"Parents
Sign in to add mentor| Zlatko Sitar | grad student | 2002 | NCSU | |
| (Study of electronic properties of III-nitrides and carbon nanotubes by electron energy distribution analysis.) | ||||
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Publications
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| Bansal A, Hilse M, Huet B, et al. (2021) Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire. Acs Applied Materials & Interfaces |
| Guo Q, Kirste R, Reddy P, et al. (2020) Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding Japanese Journal of Applied Physics. 59: 91001 |
| Reddy P, Khachariya D, Szymanski D, et al. (2020) Role of polarity in SiN on Al/GaN and the pathway to stable contacts Semiconductor Science and Technology. 35: 55007 |
| Amano H, Collazo R, Santi Cd, et al. (2020) The 2020 UV Emitter Roadmap Journal of Physics D |
| Bagheri P, Reddy P, Kim JH, et al. (2020) Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN Applied Physics Letters. 117: 82101 |
| Khachariya D, Szymanski D, Sengupta R, et al. (2020) Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN Journal of Applied Physics. 128: 64501 |
| Baker JN, Bowes PC, Harris JS, et al. (2020) Complexes and compensation in degenerately donor doped GaN Applied Physics Letters. 117: 102109 |
| Vetter E, Biliroglu M, Seyitliyev D, et al. (2020) Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures Applied Physics Letters. 117: 93502 |
| Bagheri P, Kirste R, Reddy P, et al. (2020) The nature of the DX state in Ge-doped AlGaN Applied Physics Letters. 116: 222102 |
| Washiyama S, Guan Y, Mita S, et al. (2020) Recovery kinetics in high temperature annealed AlN heteroepitaxial films Journal of Applied Physics. 127: 115301 |