Qingqing Liang, Ph.D.
Affiliations: | 2004 | Georgia Institute of Technology, Atlanta, GA |
Area:
Electronics and Electrical EngineeringGoogle:
"Qingqing Liang"Parents
Sign in to add mentor| John D. Cressler | grad student | 2004 | Georgia Tech | |
| (Systematic analysis and optimization of broadband noise and linearity in silicon germanium heterojunction bipolar transistors.) | ||||
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Publications
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| Madan A, Verma R, Arora R, et al. (2009) The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI Ieee Transactions On Nuclear Science. 56: 3256-3261 |
| Madan A, Phillips SD, Cressler JD, et al. (2009) Impact of Proton Irradiation on the RF Performance of 65 nm SOI CMOS Technology Ieee Transactions On Nuclear Science. 56: 1914-1919 |
| Madan A, Phillips SD, Cressler JD, et al. (2008) Impact of proton irradiation on the RF performance of 65 nm SOI CMOS technology Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 47-52 |
| Grens CM, Cressler JD, Andrews JM, et al. (2007) The effects of scaling and bias configuration on operating-voltage constraints in SiGe HBTs for mixed-signal circuits Ieee Transactions On Electron Devices. 54: 1605-1616 |
| Yuan J, Cressler JD, Zhu C, et al. (2007) An investigation of negative differential resistance and novel collector-current kink effects in SiGe HBTs operating at cryogenic temperatures Ieee Transactions On Electron Devices. 54: 504-516 |
| Appaswamy A, Jun B, Diestelhorst RM, et al. (2007) The effects of proton irradiation on 90 nm strained Si CMOS on SOI devices Ieee Radiation Effects Data Workshop. 62-65 |
| Yuan J, Zhu C, Cui Y, et al. (2006) A new device phenomenon in cryogenically-operated SiGe HBTs Technical Digest - International Electron Devices Meeting, Iedm |
| Liang Q, Krithivasan R, Ahmed A, et al. (2006) Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGe HBTs Solid-State Electronics. 50: 964-972 |
| Chen T, Sutton AK, Bellini M, et al. (2005) Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI Ieee Transactions On Nuclear Science. 52: 2353-2357 |
| Liang Q, Andrews JM, Cressler JD, et al. (2005) Systematic linearity analysis of RFICs using a two-port lumped-nonlinear-source model Ieee Transactions On Microwave Theory and Techniques. 53: 1745-1755 |