David R. Hughart, Ph.D.
Affiliations: | 2012 | Electrical Engineering | Vanderbilt University, Nashville, TN |
Area:
Electronics and Electrical EngineeringGoogle:
"David Hughart"Parents
Sign in to add mentorRonald D. Schrimpf | grad student | 2012 | Vanderbilt | |
(Variations in radiation response due to hydrogen: Mechanisms of interface trap buildup and annealing.) |
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Publications
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Moxim SJ, Sharov FV, Hughart DR, et al. (2022) Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability. The Review of Scientific Instruments. 93: 115101 |
Holt JS, Alamgir Z, Beckmann K, et al. (2019) Comparison of Radiation Effects in Custom and Commercially Fabricated Resistive Memory Devices Ieee Transactions On Nuclear Science. 66: 2398-2407 |
Jacobs-Gedrim RB, Hughart DR, Agarwal S, et al. (2019) Training a Neural Network on Analog TaO |
Jacobs-Gedrim RB, Agarwal S, Goeke RS, et al. (2018) Analog high resistance bilayer RRAM device for hardware acceleration of neuromorphic computation Journal of Applied Physics. 124: 202101 |
Pacheco JL, Perry DL, Hughart DR, et al. (2018) Electroforming-free TaOx memristors using focused ion beam irradiations Applied Physics A. 124: 626 |
Niroula J, Agarwal S, Jacobs-Gedrim R, et al. (2017) Piecewise empirical model (PEM) of resistive memory for pulsed analog and neuromorphic applications Journal of Computational Electronics. 16: 1144-1153 |
Flicker JD, Hughart DR, Atcitty S, et al. (2014) Progress in SiC MOSFET reliability Ecs Transactions. 64: 87-98 |
Hughart DR, Pacheco JL, Lohn AJ, et al. (2014) Mapping of radiation-induced resistance changes and multiple conduction channels in TaOx memristors Ieee Transactions On Nuclear Science. 61: 2965-2971 |
McLain ML, Hjalmarson HP, Sheridan TJ, et al. (2014) The susceptibility of TaOx-based memristors to high dose rate ionizing radiation and total ionizing dose Ieee Transactions On Nuclear Science. 61: 2997-3004 |
Hughart DR, Lohn AJ, Mickel PR, et al. (2013) A comparison of the radiation response of TaOx and TiO 2 memristors Ieee Transactions On Nuclear Science. 60: 4512-4519 |