Arunesh Goswami, Ph.D.

Affiliations: 
2014 Electrical and Computer Engineering North Carolina State University, Raleigh, NC 
Area:
Electronics and Electrical Engineering
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Robert J. Trew grad student 2014 NCSU
 (Gate Leakage Current in Nitride-Based HFETs.)
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Publications

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Goswami A, Trew RJ, Bilbro GL. (2014) Modeling of the gate leakage current in AlGaN/GaN HFETs Ieee Transactions On Electron Devices. 61: 1014-1021
Goswami A, Trew RJ, Bilbro GL. (2014) Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors Journal of Applied Physics. 116
Goswami A, Trew RJ, Bilbro GL. (2013) Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs Solid-State Electronics. 80: 23-27
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