Patrick A. Juliano, Ph.D.
Affiliations: | 2001 | University of Illinois, Urbana-Champaign, Urbana-Champaign, IL |
Area:
Electronics and Electrical EngineeringGoogle:
"Patrick Juliano"Parents
Sign in to add mentor| Elyse Rosenbaum | grad student | 2001 | UIUC | |
| (Measurement, modeling, and simulation of fast transients in ESD devices.) | ||||
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Publications
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| Voldman SH, Ronan B, Juliano PA, et al. (2002) Silicon germanium heterojunction bipolar transistor electrostatic discharge power clamps and the Johnson Limit in RF BICMOS SiGe technology Journal of Electrostatics. 56: 341-362 |
| Juliano PA, Rosenbaum E. (2001) Accurate wafer-level measurement of BSD protection device turn-on using a modified very fast transmission-line pulse system Ieee Transactions On Device and Materials Reliability. 1: 95-103 |
| Wang Y, Juliano P, Joshi S, et al. (2001) Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits Microelectronics Reliability. 41: 1781-1787 |
| Juliano PA, Rosenbaum E. (2001) A novel SCR macromodel for ESD circuit simulation Technical Digest - International Electron Devices Meeting. 319-322 |
| Voldman SH, Botula A, Hui DT, et al. (2001) Silicon Germanium heterojunction bipolar transistor ESD power clamps and the Johnson Limit Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 2001: 324-334 |
| Wu J, Juliano P, Rosenbaum E. (2000) Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 287-295 |