Abhinav Chandola, Ph.D.
Affiliations: | 2005 | Rensselaer Polytechnic Institute, Troy, NY, United States |
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Condensed Matter PhysicsGoogle:
"Abhinav Chandola"Parents
Sign in to add mentor| Partha S. Dutta | grad student | 2005 | RPI | |
| (Bulk crystal growth and infared absorption studies of gallium indium antimonide.) | ||||
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Publications
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| Dutta PS, Kim HJ, Chandola A. (2007) Controlling heat and mass transport during the vertical Bridgman growth of homogeneous ternary III-V semiconductor alloys Transactions of the Indian Institute of Metals. 60: 155-160 |
| Chavan A, Chandola A, Sridaran S, et al. (2006) Surface passivation and capping of GaSb photodiode by chemical bath deposition of CdS Journal of Applied Physics. 100 |
| Kim HJ, Chandola A, Bhat R, et al. (2006) Forced convection induced thermal fluctuations at the solid-liquid interface and its effect on the radial alloy distribution in vertical Bridgman grown Ga |
| Chandola A, Pino R, Dutta PS. (2005) Below bandgap optical absorption in tellurium-doped GaSb Semiconductor Science and Technology. 20: 886-893 |
| Chandola A, Kim HJ, Dutta PS, et al. (2005) Below band-gap optical absorption in Ga |
| Kim HJ, Chandola A, Guha S, et al. (2005) Influence of native defects on the infrared transmission of undoped Ga |
| Dutta PS, Kumar A, Chandola A, et al. (2003) Bulk growth of compositionauy homogeneous III-V ternary anoys Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 219-220 |
| Chandola A, Ko Y, Dutta PS, et al. (2003) Improvements in electrical and optical properties of low bandgap III-V antimonides by using isoelectronic dopants Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 215-216 |