Jingxi Sun, Ph.D.
Affiliations: | 2000 | University of Wisconsin, Madison, Madison, WI |
Area:
Chemical Engineering, Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Jingxi Sun"Parents
Sign in to add mentor| Thomas F. Kuech | grad student | 2000 | UW Madison | |
| (Surface chemistry and surface electronic properties of gallium arsenide and gallium nitride.) | ||||
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Publications
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| Li H, Cao F, Guo S, et al. (2017) Microstructures and properties evolution of spray-deposited Al-Zn-Mg-Cu-Zr alloys with scandium addition Journal of Alloys and Compounds. 691: 482-488 |
| Rickert KA, Ellis AB, Himpsel FJ, et al. (2002) N-GaN surface treatments for metal contacts studied via x-ray photoemission spectroscopy Applied Physics Letters. 80: 204-206 |
| Gu S, Zhang R, Sun J, et al. (2000) The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GAN Mrs Internet Journal of Nitride Semiconductor Research. 5: 138-144 |
| Kuech T, Gu S, Wate R, et al. (2000) The Chemistry of GaN Growth Mrs Proceedings. 639 |
| Paulson C, Hawkins B, Sun J, et al. (2000) Photoreflectance near-field scanning optical microscopy Materials Research Society Symposium - Proceedings. 588: 13-17 |
| Paulson C, Ellis AB, McCaughan L, et al. (2000) Demonstration of near-field scanning photoreflectance spectroscopy Applied Physics Letters. 77: 1943-1945 |
| Gu S, Zhang R, Sun J, et al. (2000) Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN Applied Physics Letters. 76: 3454-3456 |
| Sun J, Rickert KA, Redwing JM, et al. (2000) p-GaN surface treatments for metal contacts Applied Physics Letters. 76: 415-417 |
| Sun J, Redwing JM, Kuech TF. (2000) Model development of GaN MOVPE growth chemistry for reactor design Journal of Electronic Materials. 29: 2-9 |
| Sun J, Himpsel FJ, Ellis AB, et al. (1999) In situ surface passivation of GaAs by thermal nitridation using metalorganic vapor phase epitaxy Materials Research Society Symposium - Proceedings. 573: 15-20 |