Kit C. Kwong, Ph.D.
Affiliations: | 2012 | Electronic and Computer Engineering | Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong |
Area:
Electronics and Electrical EngineeringGoogle:
"Kit Kwong"Parents
Sign in to add mentorMansun J. Chan | grad student | 2012 | HKUST | |
(Phase Change Memory Model Development Based on Cell Geometry.) |
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Publications
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Chen Y, Kwong KC, Lin X, et al. (2014) 3-D resistance model for phase-change memory cell Ieee Transactions On Electron Devices. 61: 4098-4104 |
Kwong KC, Mok PKT, Chan M. (2012) Geometry based resistance model for phase change memory European Solid-State Device Research Conference. 101-104 |
Kwong KC, He J, Mok PKT, et al. (2011) Phase-change memory RESET model based on detailed cell cooling profile Ieee Transactions On Electron Devices. 58: 3635-3638 |
Kwong KC, Mok PKT, Chan M. (2011) A phase-change random access memory model for circuit simulation Technical Proceedings of the 2011 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2011. 2: 756-761 |
Kwong KC, He J, Mok PKT, et al. (2010) RESET modeling of PCM using thermal budget approach 2010 Ieee International Conference of Electron Devices and Solid-State Circuits, Edssc 2010 |
Kwong KC, He F, Chan M. (2009) SET and RESET state resistance modeling of phase change memory 2009 Ieee International Conference On Electron Devices and Solid-State Circuits, Edssc 2009. 461-464 |
Li N, Lu K, Kwong KC, et al. (2008) Comparison of PN diodes and FETs as phase change memory (PCM) driving devices International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 928-931 |
Chan WT, Ng KP, Lee MC, et al. (2008) CMOS-compatible zero-mask one time programmable (OTP) memory design International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 861-864 |
Kwong KC, Li L, He J, et al. (2008) Verilog-A model for phase change memory simulation International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 492-495 |
Kwong KC, Chan M. (2008) Circuit implementation to describe the physical behavior of phase change memory 2008 Ieee International Conference On Electron Devices and Solid-State Circuits, Edssc |