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Balaji Padmanabhan, Ph.D.

Affiliations: 
2013 Electrical Engineering Arizona State University, Tempe, AZ, United States 
Area:
Electronics and Electrical Engineering
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"Balaji Padmanabhan"
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Dragica Vasileska grad student 2013 Arizona State
 (Modeling Reliability of Gallium Nitride High Electron Mobility Transistors.)

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Publications

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Liu C, Salih A, Padmanabhan B, et al. (2015) Breakthroughs for 650-V GaN Power Devices: Stable high-temperature operations and avalanche capability Ieee Power Electronics Magazine. 2: 44-50
Roig J, Bauwens F, Banerjee A, et al. (2015) Unified theory of reverse blocking dynamics in high-voltage cascode devices Conference Proceedings - Ieee Applied Power Electronics Conference and Exposition - Apec. 2015: 1256-1261
Padmanabhan B, Vasileska D, Goodnick SM. (2013) Current degradation due to electromechanical coupling in GaN HEMT's Microelectronics Journal. 44: 592-597
Padmanabhan B, Vasileska D, Goodnick SM. (2013) Reliability concerns due to self-heating effects in GaN HEMTs Journal of Integrated Circuits and Systems. 8: 78-82
Padmanabhan B, Vasileska D, Goodnick SM. (2012) GaN HEMTs reliability the role of shielding Proceedings of the Ieee Conference On Nanotechnology
Padmanabhan B, Vasileska D, Goodnick SM. (2012) Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT 2012 15th International Workshop On Computational Electronics, Iwce 2012
Padmanabhan B, Vasileska D, Goodnick SM. (2012) Is self-heating responsible for the current collapse in GaN HEMTs? Journal of Computational Electronics. 11: 129-136
Padmanabhan B, Vasileska D, Goodnick SM. (2011) Modeling reliability of GaN/AlGaN/AlN/GaN HEMT 2011 International Semiconductor Device Research Symposium, Isdrs 2011
Padmanabhan B, Vasileska D, Goodnick SM. (2011) Electromechanical coupling in AlGaN/AlN/GaN HEMT's Technical Proceedings of the 2011 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2011. 2: 679-681
Padmanabhan B, Vasileska D, Goodnick SM. (2009) Current degradation in GaN HEMTs: Is self-heating responsible? Ecs Transactions. 49: 103-109
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