Ramya Chandrasekaran, Ph.D.
Affiliations: | 2008 | Boston University, Boston, MA, United States |
Area:
Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Ramya Chandrasekaran"Parents
Sign in to add mentor| Theodore D. Moustakas | grad student | 2008 | Boston University | |
| (Material and device studies for the development of ultra-violet light emitting diodes (UV-LEDS) along polar, non-polar and semi-polar directions.) | ||||
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Publications
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| Chandrasekaran R, Moustakas TD, Ozcan AS, et al. (2010) Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates Journal of Applied Physics. 108 |
| Zhou L, Chandrasekaran R, Moustakas TD, et al. (2008) Structural characterization of non-polar (1 1 2 0) and semi-polar (1 1 2 6) GaN films grown on r-plane sapphire Journal of Crystal Growth. 310: 2981-2986 |
| Wang Y, Özcan AS, Sanborn C, et al. (2007) Real-time x-ray studies of gallium nitride nanodot formation by droplet heteroepitaxy Journal of Applied Physics. 102: 073522 |
| Chandrasekaran R, Ozcan AS, Deniz D, et al. (2007) Growth of non-polar (1120) and semi-polar (1126) AlN and GaN films on the R-plane sapphire Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 1689-1693 |
| Chandrasekaran R, Bhattacharyya A, France R, et al. (2006) Ultraviolet light emitting diodes using non-polar A-plane AlGaN multiple quantum wells Mrs Proceedings. 955 |