Tat-Sing P. Chow
Affiliations: | Electrical Engineering | Rensselaer Polytechnic Institute, Troy, NY, United States |
Area:
Electronics and Electrical Engineering, Condensed Matter PhysicsGoogle:
"Tat-Sing Chow"
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Publications
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| Chowdhury S, Hitchcock C, Dahal R, et al. (2016) 4H-SiC n-channel DMOS IGBTs on (0001) and (000-1) oriented lightly doped free-standing substrates Materials Science Forum. 858: 954-957 |
| Chowdhury S, Yamamoto K, Chow TP. (2016) Effect of activation annealing and reactive ion etching on MOS channel properties of (11-20) oriented 4H-SiC Materials Science Forum. 858: 635-638 |
| Chowdhury S, Hitchcock C, Stum Z, et al. (2016) Experimental demonstration of high-voltage 4H-SiC bi-directional IGBTs Ieee Electron Device Letters. 37: 1033-1036 |
| Chowdhury S, Hitchcock C, Stum Z, et al. (2016) 4H-SiC n-channel insulated gate bipolar transistors on (0001) and (000-1) oriented free-standing n- substrates Ieee Electron Device Letters. 37: 317-320 |
| Chowdhury S, Hitchcock C, Dahal R, et al. (2016) High voltage 4H-SiC Bi-directional IGBTs Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 2016: 463-466 |
| Chowdhury S, Chow TP. (2016) Performance tradeoffs for ultra-high voltage (15 kV to 25 kV) 4H-SiC n-channel and p-channel IGBTs Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 2016: 75-78 |
| Chowdhury S, Chow TP. (2016) Comparative performance assessment of SiC and GaN power rectifier technologies Physica Status Solidi (C) Current Topics in Solid State Physics. 13: 360-364 |
| Guo Z, Tang K, Chow TP. (2016) Temperature dependence of GaN MOS capacitor characteristics Physica Status Solidi (C) Current Topics in Solid State Physics |
| Yamamoto K, Chowdhury S, Chow TP. (2015) Study of mobility limiting mechanisms in (11-20) 4H-SiC no annealed MOSFETs Materials Science Forum. 821: 713-716 |
| Chowdhury S, Yamamoto K, Hitchcock C, et al. (2015) Characteristics of MOS capacitors with no and POCL3 annealed gate oxides on (0001), (11-20) and (000-1) 4H-SiC Materials Science Forum. 821: 500-503 |