Liqing Lu, Ph.D.
Affiliations: | 2006 | University of South Carolina, Columbia, SC |
Area:
Electronics and Electrical EngineeringGoogle:
"Liqing Lu"Parents
Sign in to add mentor| Enrico Santi | grad student | 2006 | University of South Carolina | |
| (Physical modeling of variable -lifetime P-I-N diodes and of two-dimensional effects in insulated gate bipolar transistors (IGBTs).) | ||||
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Publications
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| Platania E, Chen Z, Chimento F, et al. (2011) A physics-based model for a SiC JFET accounting for electric-field- dependent mobility Ieee Transactions On Industry Applications. 47: 199-211 |
| Lu L, Bryant A, Hudgins JL, et al. (2010) Physics-based model of planar-gate IGBT including MOS side two-dimensional effects Ieee Transactions On Industry Applications. 46: 2556-2567 |
| Lu L, Bryant AT, Santi E, et al. (2008) Physical modeling of fast p-i-n diodes with carrier lifetime zoning, Part II: Parameter extraction Ieee Transactions On Power Electronics. 23: 198-205 |
| Bryant AT, Lu L, Santi E, et al. (2008) Physical modeling of fast p-i-n diodes with carrier lifetime zoning, Part I: Device model Ieee Transactions On Power Electronics. 23: 189-197 |