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Leda Lunardi

Affiliations: 
Electrical and Computer Engineering North Carolina State University, Raleigh, NC 
Area:
Electronics and Electrical Engineering
Website:
https://ece.ncsu.edu/people/llunard/
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"Leda Lunardi"
Bio:

https://books.google.com/books?id=UkRUAAAAYAAJ

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Parents

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Lester F. Eastman grad student 1985 Cornell (Physics Tree)
 (Fabrication and Microwave Performance of an (AlGa) As/GaAs Heterojunction Bipolar Transistor)

Children

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Michael P. Morgensen grad student 2011 NCSU
Matthew T. Veety grad student 2011 NCSU
Kanu p. Sharma grad student 2013 NCSU

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Publications

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Luo H, Wellenius P, Lunardi L, et al. (2012) Transparent IGZO-based logic gates Ieee Electron Device Letters. 33: 673-675
Suresh A, Wellenius P, Baliga V, et al. (2010) Fast all-transparent integrated circuits based on indium gallium zinc oxide thin-film transistors Ieee Electron Device Letters. 31: 317-319
Lou Y, Lunardi LM, Muth JF. (2010) Fabrication of nanoshell arrays using directed assembly of nanospheres Ieee Sensors Journal. 10: 617-620
Chintapatla S, Muth JF, Lunardi LM. (2009) Controlling the wrinkling of the bilayer thin films electrothermally Materials Research Society Symposium Proceedings. 1139: 97-102
Wellenius P, Suresh A, Luo H, et al. (2009) An amorphous indium-gallium-zinc-oxide active matrix electroluminescent pixel Ieee/Osa Journal of Display Technology. 5: 438-445
Gollakota P, Dhawan A, Wellenius P, et al. (2006) Optical characterization of Eu-doped Β-Ga 2O 3 thin films Applied Physics Letters. 88
Muth JF, Gollakota P, Dhawan A, et al. (2005) Gallium Oxide as a host for rare earth elements Materials Research Society Symposium Proceedings. 866: 177-182
Hamm RA, Chandrasekhar S, Lunardi L, et al. (1996) Materials and electrical characteristics of carbon-doped Ga0.47In0.53As using carbontetrabromide by MOMBE for HBT device applications Journal of Crystal Growth. 164: 362-370
Hamm RA, Malik R, Humphrey D, et al. (1995) Carbon doping of Ga0.47In0.53As using carbontetrabromide by metalorganic molecular beam epitaxy for InP‐based heterostructure bipolar transistor devices Applied Physics Letters. 67: 2226-2228
Hamm RA, Chandrasekhar S, Lunardi L, et al. (1995) Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy Journal of Crystal Growth. 148: 1-7
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