Benjamin E. Gaddy, Ph.D.
Affiliations: | 2013 | Materials Science and Engineering | North Carolina State University, Raleigh, NC |
Area:
Materials Science EngineeringGoogle:
"Benjamin Gaddy"Parents
Sign in to add mentor| Douglas L. Irving | grad student | 2013 | NCSU | |
| (Predictive Calculations of Defects in Thin-Film Heterostructures.) | ||||
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Publications
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| Harris JS, Gaddy BE, Collazo R, et al. (2019) Oxygen and silicon point defects in Al0.65Ga0.35N Physical Review Materials. 3 |
| Harris JS, Baker JN, Gaddy BE, et al. (2018) On compensation in Si-doped AlN Applied Physics Letters. 112: 152101 |
| Bryan I, Bryan Z, Washiyama S, et al. (2018) Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD Applied Physics Letters. 112: 062102 |
| Sachet E, Shelton CT, Harris JS, et al. (2015) Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics. Nature Materials. 14: 414-20 |
| Gaddy BE, Paisley EA, Maria JP, et al. (2014) Overcoming the polarization catastrophe in the rocksalt oxides MgO and CaO Physical Review B - Condensed Matter and Materials Physics. 90 |
| Bryan Z, Bryan I, Gaddy BE, et al. (2014) Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN Applied Physics Letters. 105 |
| Gaddy BE, Bryan Z, Bryan I, et al. (2014) The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN Applied Physics Letters. 104 |
| Paisley EA, Gaddy BE, Lebeau JM, et al. (2014) Smooth cubic commensurate oxides on gallium nitride Journal of Applied Physics. 115 |
| Gaddy BE, Bryan Z, Bryan I, et al. (2013) Vacancy compensation and related donor-acceptor pair recombination in bulk AlN Applied Physics Letters. 103 |
| Gaddy BE, Kingon AI, Irving DL. (2013) Effects of alloying and local order in AuNi contacts for Ohmic radio frequency micro electro mechanical systems switches via multi-scale simulation Journal of Applied Physics. 113 |