Yevgeniy V. Kondratenko, Ph.D.
Affiliations: | 2009 | University of Illinois, Urbana-Champaign, Urbana-Champaign, IL |
Area:
Chemical Engineering, Condensed Matter PhysicsGoogle:
"Yevgeniy Kondratenko"Parents
Sign in to add mentor| Edmund G. Seebauer | grad student | 2009 | UIUC | |
| (Optical and interface-based methods of defect engineering in silicon.) | ||||
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Publications
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| Kondratenko Y, Seebauer EG. (2013) Interface-mediated photostimulation effects on diffusion and activation of boron implanted into silicon Ecs Journal of Solid State Science and Technology. 2 |
| Gorai P, Kondratenko YV, Seebauer EG. (2012) Mechanism and kinetics of near-surface dopant pile-up during post-implant annealing Journal of Applied Physics. 111 |
| Seebauer EG, Jung MYL, Kwok CTM, et al. (2011) Measurement of photostimulated self-diffusion in silicon Journal of Applied Physics. 109 |
| Vaidyanathan R, Felch S, Graoui H, et al. (2011) Nonthermal illumination effects on ultra-shallow junction formation Applied Physics Letters. 98 |
| Dalton AS, Kondratenko YV, Seebauer EG. (2010) Diffusion mechanisms on amorphous silicon surfaces Chemical Engineering Science. 65: 2172-2176 |
| Kondratenko YV, Seebauer EG. (2010) Directed self-assembly by photostimulation of an amorphous semiconductor surface Aiche Journal. 56: 3206-3211 |