Rongjun Wang, Ph.D.

Affiliations: 
2002 Rensselaer Polytechnic Institute, Troy, NY, United States 
Area:
Electronics and Electrical Engineering
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"Rongjun Wang"

Parents

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Ishwara B. Bhat grad student 2002 RPI
 (Silicon carbide epitaxial growth for power device applications.)
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Publications

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Li C, Bhat IB, Wang R, et al. (2004) Electro-chemical mechanical polishing of silicon carbide Journal of Electronic Materials. 33: 481-486
Wang R, Bhat IB, Paul Chow T. (2002) Epitaxial growth of n-type SiC using phosphine and nitrogen as the precursors Journal of Applied Physics. 92: 7587-7592
Wang R, Bhat I, Chow P. (2000) A New Sublimation Etching for Reproducible Growth of Epitaxial Layers of SiC on SiC Substrate in a CVD Reactor Mrs Proceedings. 640
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