Rongjun Wang, Ph.D.
Affiliations: | 2002 | Rensselaer Polytechnic Institute, Troy, NY, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Rongjun Wang"Parents
Sign in to add mentorIshwara B. Bhat | grad student | 2002 | RPI | |
(Silicon carbide epitaxial growth for power device applications.) |
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Publications
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Li C, Bhat IB, Wang R, et al. (2004) Electro-chemical mechanical polishing of silicon carbide Journal of Electronic Materials. 33: 481-486 |
Wang R, Bhat IB, Paul Chow T. (2002) Epitaxial growth of n-type SiC using phosphine and nitrogen as the precursors Journal of Applied Physics. 92: 7587-7592 |
Wang R, Bhat I, Chow P. (2000) A New Sublimation Etching for Reproducible Growth of Epitaxial Layers of SiC on SiC Substrate in a CVD Reactor Mrs Proceedings. 640 |