Narayanan Ramanan, Ph.D.
Affiliations: | 2014 | Electrical and Computer Engineering | North Carolina State University, Raleigh, NC |
Area:
Electronics and Electrical EngineeringGoogle:
"Narayanan Ramanan"Parents
Sign in to add mentor| Veena Misra | grad student | 2014 | NCSU | |
| (Investigation of ALD Dielectrics for Improved Threshold Voltage Stability and Current Collapse Suppression in AlGaN/GaN MOS-HFETs.) | ||||
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Publications
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| Ramanan N, Lee B, Misra V. (2016) Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs Semiconductor Science and Technology. 31 |
| Ramanan N, Lee B, Misra V. (2015) Comparison of methods for accurate characterization of interface traps in GaN MOS-HFET devices Ieee Transactions On Electron Devices. 62: 546-553 |
| Ramanan N, Lee B, Misra V. (2015) ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications Semiconductor Science and Technology. 30 |
| Ramanan N, Lee B, Misra V. (2015) Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory Applied Physics Letters. 106 |
| Ramanan N, Lee B, Misra V. (2014) Device modeling for understanding AlGaN/GaN HEMT gate-lag Ieee Transactions On Electron Devices. 61: 2012-2018 |
| Sarkar B, Ramanan N, Jayanti S, et al. (2014) Dual floating gate unified memory MOSFET with simultaneous dynamic and non-volatile operation Ieee Electron Device Letters. 35: 48-50 |
| Kirkpatrick C, Lee B, Ramanan N, et al. (2014) Flash MOS-HFET operational stability for power converter circuits Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 875-878 |
| Ramanan N, Lee B, Kirkpatrick C, et al. (2013) Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation Semiconductor Science and Technology. 28 |
| Ramanan N, Misra V. (2011) Multivalued logic using a novel multichannel GaN MOS structure Ieee Electron Device Letters. 32: 1379-1381 |