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Prodyut Majumder, Ph.D.

Affiliations: 
2008 University of Illinois at Chicago, Chicago, IL, United States 
Area:
Chemical Engineering, Materials Science Engineering, Electronics and Electrical Engineering
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"Prodyut Majumder"
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Christos G. Takoudis grad student 2008 University of Illinois, Chicago
 (Fundamental studies of diffusion barriers for copper metallization and atomic layer deposited high-kappa films.)

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Publications

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Tao Q, Jursich G, Majumder P, et al. (2009) Composition–Structure–Dielectric Property of Yttrium-Doped Hafnium Oxide Films Deposited by Atomic Layer Deposition Electrochemical and Solid-State Letters. 12: G50
Majumder P, Jursich G, Takoudis C. (2009) Structural phase transformation of Y2O3 doped Hf O2 films grown on Si using atomic layer deposition Journal of Applied Physics. 105
Majumder P, Takoudis C. (2008) Thermal stability of Ti/Mo and Ti/MoN nanostructures for barrier applications in Cu interconnects. Nanotechnology. 19: 205202
Majumder P, Takoudis C. (2008) Reactively sputtered Mo-V nitride thin films as ternary diffusion barriers for copper metallization Journal of the Electrochemical Society. 155
Majumder P, Jursich G, Kueltzo A, et al. (2008) Atomic Layer Deposition of Y[sub 2]O[sub 3] Films on Silicon Using Tris(ethylcyclopentadienyl) Yttrium Precursor and Water Vapor Journal of the Electrochemical Society. 155: G152
Majumder P, Tiwari M, Megaridis C, et al. (2007) Evaluation and Testing of Organometallic Precursor for Copper Direct-Write Mrs Proceedings. 1002
Majumder P, Katamreddy R, Takoudis CG. (2007) Characterization of Atomic Layer Deposited Ultrathin HfO2 Film as a Diffusion Barrier in Cu Metallization Mrs Proceedings. 990
Majumder P, Katamreddy R, Takoudis C. (2007) Atomic layer deposited ultrathin HfO2 and Al2O 3 films as diffusion barriers in copper interconnects Electrochemical and Solid-State Letters. 10
Majumder P, Takoudis CG. (2007) Investigation on the diffusion barrier properties of sputtered MoW-N thin films in Cu interconnects Applied Physics Letters. 91
Majumder P, Katamreddy R, Takoudis C. (2007) Effect of film thickness on the breakdown temperature of atomic layer deposited ultrathin HfO2 and Al2O3 diffusion barriers in copper metallization Journal of Crystal Growth. 309: 12-17
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