Susan E. Babcock

Affiliations: 
University of Wisconsin, Madison, Madison, WI 
Area:
Materials Science Engineering
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"Susan Babcock"
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Publications

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Chen Y, Zuo P, Guan Y, et al. (2020) Reduction of interface reactions in low-temperature solid-phase epitaxy of ScAlMgO4 on (0001) Al2O3 Crystal Growth & Design. 20: 6001-6007
Guan Y, Luo G, Morgan D, et al. (2020) Thermodynamic stability analysis of Bi-containing III-V quaternary alloys and the effect of epitaxial strain Journal of Physics and Chemistry of Solids. 138: 109245
Guan Y, Rajeev A, Babcock SE, et al. (2020) Metal-organic vapor phase epitaxy of the quaternary metastable alloy In1–xGaxAs1−yBiy and its kinetics of growth Journal of Crystal Growth. 538: 125611
Knipfer B, Rajeev A, Isheim D, et al. (2020) Layer-thickness dependence of the compositions in strained III–V superlattices by atom probe tomography Journal of Crystal Growth. 535: 125550
Rajeev A, Chen W, Kirch J, et al. (2018) Interfacial Mixing Analysis for Strained Layer Superlattices by Atom Probe Tomography Crystals. 8: 437
Kim H, Guan Y, Babcock SE, et al. (2018) Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing Journal of Applied Physics. 123: 113102
Evans PG, Chen Y, Tilka JA, et al. (2018) Crystallization of amorphous complex oxides: New geometries and new compositions via solid phase epitaxy Current Opinion in Solid State and Materials Science. 22: 229-242
Chen Y, Yusuf MH, Guan Y, et al. (2017) Distinct nucleation and growth kinetics of amorphous SrTiO3 on (001) SrTiO3 and SiO2/Si: A step towards new architectures. Acs Applied Materials & Interfaces
Wood AW, Chen W, Kim H, et al. (2017) Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1-x Bi x explored by atom probe tomography and HAADF-STEM. Nanotechnology. 28: 215704
Guan Y, Forghani K, Kim H, et al. (2017) Surface kinetics study of metal-organic vapor phase epitaxy of GaAs 1−y Bi y on offcut and mesa-patterned GaAs substrates Journal of Crystal Growth. 464: 39-48
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