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Al F. Tasch

Affiliations: 
University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
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"Al Tasch"
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Parents

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Chih-Tang Sah grad student 1969

Children

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Scott A Hareland grad student 1992-1997 UT Austin

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Publications

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Chen Y, Wang G, Li D, et al. (2002) A universal ion implantation model for all species into single-crystal silicon Ieee Transactions On Electron Devices. 49: 1519-1525
Li D, Shrivastav G, Wang G, et al. (2002) Accurate and computationally efficient analytical 1-D and 2-D ion implantation models based on Legendre polynomials Ieee Transactions On Electron Devices. 49: 1172-1182
Chen Y, Li D, Wang G, et al. (2002) Quantum Mechanical Model of Electronic Stopping Power for Ions in a Free Electron Gas Journal of Computational Electronics. 1: 241-245
Shrivastav G, Li D, Chen Y, et al. (2002) An Analytical 1-D Model for Ion Implantation of Any Species into Single-Crystal Silicon Based on Legendre Polynomials Journal of Computational Electronics. 1: 247-250
Mudanai S, Register LF, Tasch AF, et al. (2001) Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs Ieee Electron Device Letters. 22: 145-147
Wang G, Chen Y, Li D, et al. (2001) Oxygen recoil implant from SiO2 layers into single-crystalline silicon Journal of Applied Physics. 89: 5997-6001
Li D, Wang G, Chen Y, et al. (2001) A computationally efficient simulator for three-dimensional Monte Carlo simulation of ion implantation into complex structures Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 184: 500-508
Li D, Wang G, Chen Y, et al. (2001) A Computationally Efficient Model for Three-dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures Journal of Computational Electronics. 1: 332-335
Mudanai S, Register LF, Tasch AF, et al. (2001) A new and accurate quantum mechanical compact model for NMOS gate capacitance Annual Device Research Conference Digest. 87-88
Ouyang Q, Chen X, Mudanai SP, et al. (2000) A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current Ieee Transactions On Electron Devices. 47: 1943-1949
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