Shrawan K. Jha, Ph.D.
Affiliations: | 2008 | Hong Kong Polytechnic University (Hong Kong) |
Area:
Electronics and Electrical EngineeringGoogle:
"Shrawan Jha"Parents
Sign in to add mentor| Charles Surya | grad student | 2008 | Hong Kong Polytechnic University (Hong Kong) | |
| (Aluminum gallium nitride/gallium nitride based HEMT structures and applications.) | ||||
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Publications
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| Jelenković EV, Kovačević MS, Stupar DZ, et al. (2014) Positive bias temperature instability of irradiated n-channel thin film transistors Thin Solid Films. 556: 535-538 |
| Yan C, Jha SK, Qian JC, et al. (2013) Electronic structure and electrical transport in ternary Al-Mg-B films prepared by magnetron sputtering Applied Physics Letters. 102: 122110 |
| Jha SK, Kutsay O, Bello I, et al. (2013) ZnO nanorod based low turn-on voltage LEDs with wide electroluminescence spectra Journal of Luminescence. 133: 222-225 |
| Wang CD, Jha SK, Chen ZH, et al. (2012) Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions. Journal of Nanoscience and Nanotechnology. 12: 4560-3 |
| Jha SK, Luan C, To CHJ, et al. (2012) ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis Applied Physics Letters. 101: 211116 |
| Liu CP, Chen ZH, Wang HE, et al. (2012) Enhanced performance by incorporation of zinc oxide nanowire array for organic-inorganic hybrid solar cells Applied Physics Letters. 100: 243102 |
| Jha S, Wang H, Kutsay O, et al. (2012) Exploiting nanostructure-thin film interfaces in advanced sensor device configurations Vacuum. 86: 757-760 |
| Bello I, Chong YM, Ye Q, et al. (2012) Materials with extreme properties: Their structuring and applications Vacuum. 86: 575-585 |
| Jelenković EV, Kutsay O, Jha SK, et al. (2012) Aluminum induced formation of SiGe alloy in Ge/Si/Al thin film structure Journal of Non-Crystalline Solids. 358: 771-775 |
| Jha S, Wang CD, Luan CY, et al. (2012) Near-Ultraviolet Light-Emitting Devices Using Vertical ZnO Nanorod Arrays Journal of Electronic Materials. 41: 853-856 |