Dennis M. Maher
Affiliations: | North Carolina State University, Raleigh, NC |
Area:
Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Dennis Maher"
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Publications
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| Genç A, Banerjee R, Thompson GB, et al. (2009) Complementary techniques for the characterization of thin film Ti/Nb multilayers. Ultramicroscopy. 109: 1276-81 |
| Ehrstein J, Richter C, Chandler-Horowitz D, et al. (2006) A Comparison of Thickness Values for Very Thin SiO[sub 2] Films by Using Ellipsometric, Capacitance-Voltage, and HRTEM Measurements Journal of the Electrochemical Society. 153: F12 |
| Ehrstein JR, Richter CA, Chandler-Horowitz D, et al. (2003) Thickness Evaluation for 2nm SiO2 Films, a Comparison of Ellipsometric, Capacitance‐Voltage and HRTEM Measurements Characterization and Metrology For Ulsi Technology. 683: 331-336 |
| Chambers JJ, Busch BW, Schulte WH, et al. (2001) Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon Applied Surface Science. 181: 78-93 |
| Oberhofer A, Chen J, Koh K, et al. (1999) Process Definition for Obtaining Ultra-Thin Silicon Oxides Using Full-Wafer Electrical and Optical Measurements Mrs Proceedings. 567: 573 |
| O'Neil PA, Öztürk MC, Batchelor AD, et al. (1999) Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates Journal of the Electrochemical Society. 146: 3079-3086 |
| O'Neil PA, Öztürk MC, Batchelor AD, et al. (1999) Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates I. Role of implanted BF2 Journal of the Electrochemical Society. 146: 3070-3078 |
| O'Neil PA, Öztürk MC, Batchelor AD, et al. (1999) Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine Journal of the Electrochemical Society. 146: 2344-2352 |
| O'Neil PA, Öztürk MC, Batchelor AD, et al. (1999) Quality of selective silicon epitaxial films deposited using disilane and chlorine Journal of the Electrochemical Society. 146: 2337-2343 |
| Wolfe DM, Hinds BJ, Wang F, et al. (1999) Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 2170-2177 |