Weize W. Xiong, Ph.D.
Affiliations: | 2001 | University of California, Davis, Davis, CA |
Area:
Electronics and Electrical EngineeringGoogle:
"Weize Xiong"Parents
Sign in to add mentor| J P. Colinge | grad student | 2001 | UC Davis | |
| (Design of advanced low -power, sub -quarter micron metal oxide semiconductor field effect transistors (MOSFET).) | ||||
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Publications
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| Na K-, Park K-, Cristoloveanu S, et al. (2012) Low-frequency noise and mobility in triple-gate silicon-on-insulator transistors: Evidence for volume inversion effects Microelectronic Engineering. 98: 85-88 |
| Chang SJ, Bawedin M, Xiong W, et al. (2011) A FinFET memory with remote carrier trapping in ONO buried insulator Microelectronic Engineering. 88: 1203-1206 |
| Song J, Yuan Y, Yu B, et al. (2010) Compact Modeling of Experimental n- and p-Channel FinFETs Ieee Transactions On Electron Devices. 57: 1369-1374 |
| Barrett C, Lederer D, Redmond G, et al. (2010) Variable temperature characterization of low-dimensional effects in tri-gate SOI MOSFETs Solid-State Electronics. 54: 1273-1277 |
| Lee CW, Afzalian A, Ferain I, et al. (2010) Influence of gate misalignment on the electrical characteristics of MuGFETS Solid-State Electronics. 54: 226-230 |
| Colinge JP, Lederer D, Afzalian A, et al. (2009) Properties of accumulation-mode multi-gate field-effect transistors Japanese Journal of Applied Physics. 48: 034502 |
| Esqueda IS, Barnaby HJ, McLain ML, et al. (2009) Modeling the radiation response of fully-depleted SOI n-channel MOSFETs Ieee Transactions On Nuclear Science. 56: 2247-2250 |
| Zaman RJ, Matthews K, Hasan MM, et al. (2009) A novel low-cost trigate process suitable for embedded CMOS 1T-1C pseudo-SRAM application Ieee Transactions On Electron Devices. 56: 448-455 |
| Song J, Yu B, Xiong W, et al. (2009) Gate-Length-Dependent Strain Effect in n- and p-Channel FinFETs Ieee Transactions On Electron Devices. 56: 533-536 |
| Na K-, Cristoloveanu S, Bae Y-, et al. (2009) Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs Solid-State Electronics. 53: 150-153 |