Max O. Bloomfield, Ph.D.
Affiliations: | 2007 | Rensselaer Polytechnic Institute, Troy, NY, United States |
Area:
Materials Science EngineeringGoogle:
"Max Bloomfield"Parents
Sign in to add mentorTimothy S. Cale | grad student | 2007 | RPI | |
(A computational framework for modeling grain structure development in three dimensions.) |
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Publications
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Li Z, Bloomfield MO, Oberai AA. (2017) Simulation of finite-strain inelastic phenomena governed by creep and plasticity Computational Mechanics. 62: 323-345 |
Goldfarb DL, Bloomfield MO, Colburn M. (2016) Thermomechanical behavior of EUV pellicle under dynamic exposure conditions Proceedings of Spie. 9776: 977621 |
Bloomfield MO, Li Z, Granzow B, et al. (2016) Component-based workflows for parallel thermomechanical analysis of arrayed geometries Engineering With Computers. 33: 509-517 |
Bloomfield MO, Bentz DN, Cale TS. (2008) Stress-induced grain boundary migration in polycrystalline copper Journal of Electronic Materials. 37: 249-263 |
Cale TS, Bloomfield MO, Gobbert MK. (2007) Two deterministic approaches to topography evolution Surface and Coatings Technology. 201: 8873-8877 |
Bloomfield MO, Bentz DN, Lu JQ, et al. (2007) Thermally induced stresses in 3D-IC inter-wafer interconnects: A combined grain-continuum and continuum approach Microelectronic Engineering. 84: 2750-2756 |
Bentz DN, Bloomfield MO, Cale TS. (2006) Grain-Focused Microstructure Simulations: Stress-Induced Evolution of Polycrystalline Films Advances in Science and Technology. 45: 1178-1183 |
Zhang J, Bloomfield MO, Lu JQ, et al. (2006) Modeling thermal stresses in 3-D IC interwafer interconnects Ieee Transactions On Semiconductor Manufacturing. 19: 437-448 |
Bentz DN, Bloomfield MO, Lu JQ, et al. (2006) Influences of grain structure on thermally induced stresses in 3D IC inter-wafer vias Journal of Computational Electronics. 5: 327-331 |
Zhang J, Bloomfield MO, Lu JQ, et al. (2005) Thermal stresses in 3D IC inter-wafer interconnects Microelectronic Engineering. 82: 534-547 |