Gerold W. Neudeck
Affiliations: | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringWebsite:
https://nanohub.org/members/9460Google:
""Gerold Walter Neudeck Purdue""Bio:
https://www.proquest.com/openview/87a575a414b59ec01967ac2002c2cac1/1
Parents
Sign in to add mentorHannis Woodson Thompson | grad student | 1969 | Purdue | |
(An Investigation of Noise In N-N Germanium-Silicon Heterojunctions) |
Children
Sign in to add traineeRashid Bashir | grad student | (BME Tree) | |
Shibly S. Ahmed | grad student | 2001 | Purdue |
Julie C. Chang | grad student | 2001 | Purdue |
Tai-Chi Su | grad student | 2001 | Purdue |
Jianan Yang | grad student | 2001 | Purdue |
BETA: Related publications
See more...
Publications
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
Yang J, Denton J, Neudeck G. (2003) Ammonia nitrided isolation oxide for selective epitaxial growth technology to eliminate edge transistor effects of SOI and bulk N-channel MOSFETs Electronics Letters. 39: 1013 |
Yang J, Neudeck GW, Denton JP. (2002) Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors Journal of Applied Physics. 91: 420 |
Bourland S, Denton J, Ikram A, et al. (2001) Silicon-on-insulator processes for the fabrication of novel nanostructures Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19: 1995 |
Ahmed SS, Denton JP, Neudeck GW. (2001) Nitrided thermal SiO[sub 2] for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal–oxide–semiconductor field effect transistor Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19: 800 |
Yang J, Denton JP, Neudeck GW. (2001) Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors Journal of Vacuum Science & Technology B. 19: 327-332 |
Bashir R, Su T, Sherman JM, et al. (2000) Reduction of sidewall defect induced leakage currents by the use of nitrided field oxides in silicon selective epitaxial growth isolation for advanced ultralarge scale integration Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 695-699 |
Bashir R, Gupta A, Neudeck GW, et al. (2000) On the design of piezoresistive silicon cantilevers with stress concentration regions for scanning probe microscopy applications Journal of Micromechanics and Microengineering. 10: 483-491 |
Yang J, Neudeck GW, Denton JP. (2000) Unique method to electrically characterize a single stacking fault in silicon-on-insulator metal–oxide–semiconductor field-effect transistors Applied Physics Letters. 77: 4034-4036 |
Gómez R, Bashir R, Neudeck GW. (2000) On the design and fabrication of novel Lateral Bipolar Transistor in a deep-submicron technology Microelectronics Journal. 31: 199-205 |
Neudeck GW, Pae S, Denton JP, et al. (1999) Multiple layers of silicon-on-insulator for nanostructure devices Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 994 |