Jianan Yang, Ph.D.
Affiliations: | 2001 | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Jianan Yang"Parents
Sign in to add mentor| Gerold W. Neudeck | grad student | 2001 | Purdue | |
| (Edge transistor elimination using ammonia nitrided field oxide in SOI and oxide trench isolated SEG N -channel MOSFETs and electrical effects of a single stacking fault on fully depleted thin-film SOI MOSFETs.) | ||||
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Publications
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| Yang J, Denton J, Neudeck G. (2003) Ammonia nitrided isolation oxide for selective epitaxial growth technology to eliminate edge transistor effects of SOI and bulk N-channel MOSFETs Electronics Letters. 39: 1013 |
| Yang J, Neudeck GW, Denton JP. (2002) Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors Journal of Applied Physics. 91: 420 |
| Yang J, Denton JP, Neudeck GW. (2001) Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors Journal of Vacuum Science & Technology B. 19: 327-332 |
| Yang J, Neudeck GW, Denton JP. (2000) Unique method to electrically characterize a single stacking fault in silicon-on-insulator metal–oxide–semiconductor field-effect transistors Applied Physics Letters. 77: 4034-4036 |