Weifeng Zhao, Ph.D.
Affiliations: | 2006 | University of Illinois, Urbana-Champaign, Urbana-Champaign, IL |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Weifeng Zhao"Parents
Sign in to add mentor| Ilesanmi Adesida | grad student | 2006 | UIUC | |
| (Monolithic integration of thermally stable enhancement-mode and depletion-mode indium phosphide HEMTs utilizing iridium-gate and silver-ohmic contact techniques.) | ||||
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Publications
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| Choi W, Zhao W, Bae J, et al. (2007) Micro-Racetrack Notch Filters Based on InGaAsP/InP High Mesa Optical Waveguides Japanese Journal of Applied Physics. 46: 2434-2439 |
| Choi WS, Jang JH, Yu BA, et al. (2006) Low loss high mesa optical waveguides based on InGaAsP/InP heterostructures. Journal of Nanoscience and Nanotechnology. 6: 3562-6 |
| Zhao W, Mohammed FM, Adesida I. (2006) Application of the Ag-Based Ohmic Contact to the Realization of Thermally-Stable InAlAs/InGaAs/InP High Electron Mobility Transistors Japanese Journal of Applied Physics. 45: 7632-7636 |
| Wang L, Zhao W, Adesida I. (2006) Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs∕InGaAs high electron mobility transistors Applied Physics Letters. 89: 211910 |
| Zhao W, Wang L, Adesida I. (2006) Electrical and structural investigations of Ag-based Ohmic contacts for InAlAs∕InGaAs∕InP high electron mobility transistors Applied Physics Letters. 89: 072105 |
| Wang L, Zhao W, Adesida I. (2006) Analytical XTEM Study of Ir/InAlAs Interfacial Reaction for InP-based High Electron Mobility Transistors (HEMTs) Gate Technology Microscopy and Microanalysis. 12: 718-719 |
| Zhao W, Bae JW, Adesida I, et al. (2005) Effect of mask thickness on the nanoscale sidewall roughness and optical scattering losses of deep-etched InP∕InGaAsP high mesa waveguides Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 2041 |
| Zhao W, Adesida I. (2005) High temperature annealed Ge∕Ag∕Ni ohmic contact for InAlAs∕InGaAs HEMTs Electronics Letters. 41: 664 |
| Jang JH, Zhao W, Bae JW, et al. (2004) Study of the evolution of nanoscale roughness from the line edge of exposed resist to the sidewall of deep-etched InP∕InGaAsP heterostructures Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 2538 |
| Bae JW, Zhao W, Jang JH, et al. (2003) Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for low loss optical waveguide applications Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 2888 |