Aleksandar G. Ostrogorsky
Affiliations: | Rensselaer Polytechnic Institute, Troy, NY, United States |
Area:
Mechanical EngineeringGoogle:
"Aleksandar Ostrogorsky"
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Publications
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| Bhattacharya P, Groza M, Cui Y, et al. (2010) Growth of InI single crystals for nuclear detection applications Journal of Crystal Growth. 312: 1228-1232 |
| Ostrogorsky AG, Marin C, Volz MP, et al. (2009) Initial transient in Zn-doped InSb grown in microgravity Journal of Crystal Growth. 311: 3243-3248 |
| Churilov AV, Higgins WM, Ostrogorsky AG, et al. (2008) Modeling and crystal growth of semi-transparent rare earth halides Journal of Crystal Growth. 310: 2094-2098 |
| Ostrogorsky AG, Marin C, Churilov A, et al. (2008) Reproducible Te-doped InSb experiments in Microgravity Science Glovebox at the International Space Station Journal of Crystal Growth. 310: 364-371 |
| Cummings T, Marin C, Ostrogorsky AG, et al. (2006) Tetragonal red and yellow HgI2–CdI2 crystals for X- and γ-ray solid-state detectors directionally solidified under argon pressure of 20 atm Journal of Crystal Growth. 297: 334-338 |
| Churilov A, Ostrogorsky AG, Volz MP. (2006) Solidification using a baffle in sealed ampoules: Ground-based experiments Journal of Crystal Growth. 295: 20-30 |
| Churilov AV, Ostrogorsky AG. (2005) Model of Tellurium- and Zinc-Doped Indium Antimonide Solidification in Space Journal of Thermophysics and Heat Transfer. 19: 542-547 |
| Nicoara I, Nicoara D, Marín C, et al. (2005) Directional solidification of PMN0.65PT0.35 ferroelectric crystals at 1 and 7 atm Journal of Crystal Growth. 274: 118-125 |
| Vogel MJ, Ostrogorsky AG. (2001) Directional solidification using a baffle in microgravity Acta Astronautica. 48: 93-100 |
| Dutta PS, Ostrogorsky AG. (2000) Segregation of Ga in Ge and InSb in GaSb Journal of Crystal Growth. 217: 360-365 |